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Journal
Affiliation
ISSN
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Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology
(Articles)
Viranjay M. Srivastava
Wireless Engineering and Technology
Vol.1 No.2
,November 2, 2010
DOI:
10.4236/wet.2010.12008
6,446
Downloads
12,150
Views
Citations
Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch
(Articles)
Viranjay M. Srivastava
,
Kalyan S. Yadav
,
Ghanashyam Singh
Wireless Engineering and Technology
Vol.2 No.1
,January 30, 2011
DOI:
10.4236/wet.2011.21003
6,384
Downloads
11,576
Views
Citations
Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light
(Articles)
Ibrahima Diatta
,
Ibrahima Ly
,
Mamadou Wade
,
Marcel Sitor Diouf
,
Senghane Mbodji
,
Grégoire Sissoko
World Journal of Condensed Matter Physics
Vol.6 No.3
,August 25, 2016
DOI:
10.4236/wjcmp.2016.63024
2,814
Downloads
4,316
Views
Citations
Effect of Temperature on the Capacitance of a Silicon Solar Cell in Static Regime
(Articles)
Gökhan Sahin
Energy and Power Engineering
Vol.10 No.5
,May 24, 2018
DOI:
10.4236/epe.2018.105013
824
Downloads
1,823
Views
Citations
Modeling for Underground Cable Water Tree Growth Dynamics
(Articles)
Sola Famakin
,
Charles Kim
Journal of Power and Energy Engineering
Vol.7 No.12
,December 30, 2019
DOI:
10.4236/jpee.2019.712004
606
Downloads
2,295
Views
Citations
Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips
(Articles)
Yasuhisa Omura
,
Yukio Iida
Circuits and Systems
Vol.4 No.2
,April 17, 2013
DOI:
10.4236/cs.2013.42024
4,676
Downloads
7,279
Views
Citations
Electrical Analysis of Indium Deep Levels Effects on Kink Phenomena of Silicon NMOSFETs
(Articles)
Abdelaali Fargi
,
Neila Hizem
,
Adel Kalboussi
,
Abdelkader Souifi
World Journal of Nano Science and Engineering
Vol.4 No.1
,March 13, 2014
DOI:
10.4236/wjnse.2014.41002
3,834
Downloads
5,280
Views
Citations
Accurate Extraction of Effective Gate Resistance in RF MOSFET
(Articles)
Ikkyun Jo
,
Toshimasa Matsuoka
Circuits and Systems
Vol.6 No.5
,May 22, 2015
DOI:
10.4236/cs.2015.65015
6,124
Downloads
7,480
Views
Citations
Study of Timing Characteristics of NOT Gate Transistor Level Circuit Implemented Using Nano-MOSFET by Analyzing Sub-Band Potential Energy Profile and Current-Voltage Characteristic of Quasi-Ballistic Transport
(Articles)
Chek Yee Ooi
,
Soo King Lim
World Journal of Nano Science and Engineering
Vol.6 No.4
,December 29, 2016
DOI:
10.4236/wjnse.2016.64016
1,653
Downloads
2,952
Views
Citations
Simulation Study of 50 nm Gate Length MOSFET Characteristics
(Articles)
Towhid Adnan Chowdhury
Advances in Materials Physics and Chemistry
Vol.13 No.6
,June 28, 2023
DOI:
10.4236/ampc.2023.136009
161
Downloads
755
Views
Citations
The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure
(Articles)
Xiang Wang
,
Chao Song
,
Yanqing Guo
,
Jie Song
,
Rui Huang
Modeling and Numerical Simulation of Material Science
Vol.3 No.1B
,January 21, 2013
DOI:
10.4236/mnsms.2013.31B006
3,658
Downloads
5,330
Views
Citations
Two-Capacitor Electrostatic Microgenerators
(Articles)
Igor L. Baginsky
,
Edward G. Kostsov
,
Victor F. Kamishlov
Engineering
Vol.5 No.11A
,October 22, 2013
DOI:
10.4236/eng.2013.511A002
4,387
Downloads
6,636
Views
Citations
This article belongs to the Special Issue on
Micro-Electro-Mechanical Systems Research and Application
Study the Effect of Ruthenium Dye Layer on Negative Capacitance in Solar Cells Based on the Nc-TiO
2
Semiconducting Polymer Heterojunction
(Articles)
H. Al-Dmour
Materials Sciences and Applications
Vol.6 No.1
,January 21, 2015
DOI:
10.4236/msa.2015.61012
2,674
Downloads
3,325
Views
Citations
The Evaluation of Measurement Uncertainty and Its Application in the Vacuum Pressure Measurement
(Articles)
Yulin Zhou
,
Xin Quan
,
Tieniu Yang
Open Journal of Applied Sciences
Vol.5 No.8
,August 28, 2015
DOI:
10.4236/ojapps.2015.58048
3,144
Downloads
4,047
Views
Citations
Inductance and Capacitance of the Multi Josephson Junction in Superconductor
(Articles)
H. M. A. R. Maruf
,
M. R. Islam
,
F.-U.-Z. Chowdhury
Journal of Applied Mathematics and Physics
Vol.6 No.12
,December 18, 2018
DOI:
10.4236/jamp.2018.612212
1,351
Downloads
4,385
Views
Citations
Effect of the Dynamic Resistance on the Maximum Output Power in Dynamic Modelling of Photovoltaic Solar Cells
(Articles)
Siaka Touré
Open Journal of Modelling and Simulation
Vol.10 No.1
,December 16, 2021
DOI:
10.4236/ojmsi.2022.101003
179
Downloads
703
Views
Citations
Embedded Control of LCL Resonant Converter Analysis, Design, Simulation and Experimental Results
(Articles)
S. Selvaperumal
,
C. Christober Asir Rajan
Engineering
Vol.1 No.1
,June 3, 2009
DOI:
10.4236/eng.2009.11002
9,671
Downloads
16,296
Views
Citations
Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch – A Review
(Articles)
Viranjay M. Srivastava
,
K. S Yadav
,
G Singh
Wireless Sensor Network
Vol.3 No.8
,August 22, 2011
DOI:
10.4236/wsn.2011.38031
4,890
Downloads
8,917
Views
Citations
Design of Low Voltage, Low Power (IF) Amplifier Based-On MOSFET Darlington Configuration
(Articles)
Hassan Jassim Motlak
Circuits and Systems
Vol.4 No.3
,June 26, 2013
DOI:
10.4236/cs.2013.43036
5,793
Downloads
9,438
Views
Citations
Negative Resistance Region 10 nm Gate Length on FINFET
(Articles)
Maryam Nezafat
,
Omid Zeynali
,
Daruosh Masti
Journal of Modern Physics
Vol.5 No.12
,July 25, 2014
DOI:
10.4236/jmp.2014.512114
3,581
Downloads
4,403
Views
Citations
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