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Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

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DOI: 10.4236/wet.2011.21003    5,387 Downloads   10,361 Views   Citations


In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.

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The authors declare no conflicts of interest.

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V. Srivastava, K. Yadav and G. Singh, "Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch," Wireless Engineering and Technology, Vol. 2 No. 1, 2011, pp. 15-22. doi: 10.4236/wet.2011.21003.


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