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Negative Resistance Region 10 nm Gate Length on FINFET

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DOI: 10.4236/jmp.2014.512114    2,821 Downloads   3,339 Views   Citations

ABSTRACT

In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Nezafat, M. , Zeynali, O. and Masti, D. (2014) Negative Resistance Region 10 nm Gate Length on FINFET. Journal of Modern Physics, 5, 1117-1123. doi: 10.4236/jmp.2014.512114.

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