Negative Resistance Region 10 nm Gate Length on FINFET

Maryam Nezafat, Omid Zeynali, Daruosh Masti

Department of Engineering, Islamic Azad University, Bushehr, Iran.
Islamic Azad University, Science and Research Branch, Bushehr, Iran.
Sama Technical and Vocational College, Islamic Azad University, Kazeroon Branch, Kazeroon, Iran.

DOI: 10.4236/jmp.2014.512114                

Abstract

In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.

Keywords

Multi-Gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), FINFET, Silicon on Insulator, Negative Resistance

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	Copling, J.-P. (2007) FINFETs and Other Multi Gate Transistors. Department of Electronics Science, USA.
[2]	Breed, A.A. and Roenker, K.P. (2008) Analog Integrated Circuits and Signal Processing, 56, 135-141. http://dx.doi.org/10.1007/s10470-007-9129-6
[3]	Mil’sthein, S. and Liessner, C. (2006) RF Switch Using Pairs of pHEMTs with Shifted Gates. Patent Application No. 11407381.
[4]	Mil’sthein, S. and Liessner, C. (2005) Microelectronics Journal, 36, 316-318. http://dx.doi.org/10.1016/j.mejo.2005.02.052
[5]	Raj, B., Saxena, A.K. and Dasgupta, S. (2010) IEEE Computer Society, 526, 529.
[6]	Kim, S.-H., Fossum, J.G. and Trivedi, V.P. (2005) IEEE Transaction on Electron Devices, 52, 1993-1997. http://dx.doi.org/10.1109/TED.2005.854286
[7]	Lemme, M.C., Mollenhauer, T., Henschel, W., Baus, M., Winkler, O., Granzner, R., Schwierz, F., Spangenberg, B. and Kurz, H. (2004) Solid-State Electronics, 48, 529-534. http://dx.doi.org/10.1016/j.sse.2003.09.027
[8]	Razavi, B. (2001) Design of Analog CMOS Integrated Circuits.