Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

DOI: 10.4236/cs.2013.42024   PDF   HTML     4,121 Downloads   6,455 Views   Citations

Abstract

The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.

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Y. Omura and Y. Iida, "Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips," Circuits and Systems, Vol. 4 No. 2, 2013, pp. 173-180. doi: 10.4236/cs.2013.42024.

Conflicts of Interest

The authors declare no conflicts of interest.

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