Park, S.Y., Kim, P.J., Lee, Y.P., Shin, S.W., Kim, T.H., Kang, J.H. and Rhee, J.Y. (2007) Realization of Room-Temperature Ferromagnetism and of Improved Carrier Mobility in Mn-Doped ZnO Film by Oxygen Deficiency, Introduced by Hydrogen and Heat Treatments. Advanced Materials, 19, 3496-3500.
http://dx.doi.org/10.1002/adma.200602144

has been cited by the following article:

• TITLE: The Magnetoresistance of Nanostructured Co-ZnO Films with ZnO Buffer-Layers

  AUTHORS: Xiaoli Li, Long Cheng, Long Cheng, Yalei Wang, Yan Gao, Zhiyong Quan, Xiufang Qin, Harry J. Blythe, Gillian A. Gehring, Xiaohong Xu

  KEYWORDS: Magnetron Sputtering, Magnetoresistance, ZnO Buffer-Layer

  JOURNAL NAME: Materials Sciences and Applications, Vol.5 No.14, December 3, 2014

  ABSTRACT: Co-ZnO films were prepared on oxidised silicon by magnetron sputtering at room temperature both with and without a ZnO buffer-layer. The Co-ZnO films consisted of Co particles dispersed in a semiconductor matrix. The combination of a Co-ZnO layer and a ZnO buffer-layer has a higher magnetoresistance than the Co-ZnO layer alone on an insulating Si substrate. The causes of this effect were investigated using X-ray photoelectron spectroscopy, depth profiling using Auger electron spectroscopy and electrical resistance as well as measurements of the change in the saturation magnetisation, the field cooled- and zero field cooled-magnetisation. This work has shown clearly what criteria are needed to optimise the magnetoresistance and how these conditions may be met by adding a buffer-layer thus making granular films based on ZnO more suitable for applications as field sensors.