Thin Film Characterization Using Rotating Polarizer Analyzer Ellipsometer with a Speed Ratio 1:3
Sofyan A. Taya, Taher M. El-Agez, Anas A. Alkanoo
DOI: 10.4236/jemaa.2011.39056   PDF    HTML   XML   4,878 Downloads   8,409 Views   Citations


In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1:3. We applied this technique to bulk samples. In this work, we present theoretically the characterization of 100 nm SiO2 thin film using this spectroscopic RPAE. We assume a structure consisting of air (ambient)/SiO2 (thin film)/c-Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200 - 800 nm. The results are compared with the proposed thickness and with the accepted values for SiO2 optical constants.

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S. Taya, T. El-Agez and A. Alkanoo, "Thin Film Characterization Using Rotating Polarizer Analyzer Ellipsometer with a Speed Ratio 1:3," Journal of Electromagnetic Analysis and Applications, Vol. 3 No. 9, 2011, pp. 351-358. doi: 10.4236/jemaa.2011.39056.

Conflicts of Interest

The authors declare no conflicts of interest.


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