L. Vina, C. Umbatch, M. Cardona and L. Vodopyanov, “Ellipsometric Studies of Electric Interband Transitions in CdxHg1–xTe,” Physical Review B, Vol. 29, No. 12, 1984, pp. 6752-6760. doi:10.1103/PhysRevB.29.6752

has been cited by the following article:

• TITLE: Thin Film Characterization Using Rotating Polarizer Analyzer Ellipsometer with a Speed Ratio 1:3

  AUTHORS: Sofyan A. Taya, Taher M. El-Agez, Anas A. Alkanoo

  KEYWORDS: Ellipsometry, Rotating Polarizer-Analyzer Ellipsometer, Thin Film Characterization, Optical Constants, C-Si, SiO2

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.3 No.9, September 28, 2011

  ABSTRACT: In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1:3. We applied this technique to bulk samples. In this work, we present theoretically the characterization of 100 nm SiO2 thin film using this spectroscopic RPAE. We assume a structure consisting of air (ambient)/SiO2 (thin film)/c-Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200 - 800 nm. The results are compared with the proposed thickness and with the accepted values for SiO2 optical constants.