Fabrication of Erbium and Ytterbium Co-Doped Tantalum-Oxide Thin Films Using Radio-Frequency Co-Sputtering

Kenta Miura^*, Yuki Arai, Kazusa Kano, Osamu Hanaizumi

Graduate School of Science and Technology, Gunma University, Kiryu, Japan.

DOI: 10.4236/msa.2015.65039                

Abstract

An erbium and ytterbium co-doped tantalum-oxide (Ta₂ O₅:Er, Yb) thin film was fabricated using a simple co-sputtering method for the first time, and its photoluminescence (PL) spectrum was evaluated. Energy transfers between Er³⁺ and Yb³⁺ in the Ta₂ O₅:Er, Yb co-sputtered thin film were discussed by comparing between PL spectra of the Ta₂ O₅:Er, Yb film and Ta₂ O₅:Er or Ta₂ O₅:Yb films reported in our previous works. Such a Ta₂ O₅:Er, Yb co-sputtered film can be used as a high-refractive- index and light-emitting material of a multilayered photonic crystal that can be applied to a novel light-emitting device, and it will also be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.

Keywords

Tantalum Oxide, Erbium, Ytterbium, Co-Sputtering, Photoluminescence

Conflicts of Interest

The authors declare no conflicts of interest.

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