[1]
|
K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert and W. Stolz, “GaP-Nucleation on Exact Si(001) Substrates for III/V Device Integration,” Journal of Crystal Growth, Vol. 315, No. 1, 2011, pp. 37-47.
doi:10.1016/j.jcrysgro.2010.10.036
|
[2]
|
S. G. Ghalamestani, M. Berg, K. A. Dick and L.-E. Wernersson, “High Quality InAs and GaSb Thin Layers Grown on Si(111),” Journal of Crystal Growth, Vol. 332, No. 1, 2011, pp. 12-16.
doi:10.1016/j.jcrysgro.2011.03.062
|
[3]
|
Yu. B. Bolkhovityanov and O. P. Pchelyakov, “GaAs Epitaxy on Si Substrates: Modern Status of Research and Engineering,” Physics-Uspekhi, Vol. 51, No. 5, 2008, pp. 437-456. doi:10.1070/PU2008v051n05ABEH006529
|
[4]
|
J. G. Cederberg, D. Leonhardt, J. J. Sheng, Q. Li, M. S. Carroll and S. M. Han, “GaAs/Si Epitaxial Integration Utilizing a Two-Step, Selectively Grown Ge Intermediate Layer,” Journal of Crystal Growth, Vol. 312, No. 8, 2010, pp. 1291-1296. doi:10.1016/j.jcrysgro.2009.10.061
|
[5]
|
V. Destefanis, J.M. Hartmann, A. Abbadie, A. M. Papon and T. Billon, “Growth and Structural Properties of SiGe Virtual Substrates on Si(100), (110) and (111),” Journal of Crystal Growth, Vol. 311, No. 4, 2009, pp. 1070-1079.
doi:10.1016/j.jcrysgro.2008.12.034
|
[6]
|
P. M. J. Maré, K. Nakagawa, F. M. Mulders, J. F. Van der Veen and K. L. Kavanagh, “Thin Epitaxial Ge-Si(111) Films: Study and Control of Morphology,” Surface Science, Vol. 191, No. 3, 1987, pp. 305-328.
doi:10.1016/S0039-6028(87)81180-9
|
[7]
|
U. Köhler, O. Jusko, G. Pietsch, B. Müller and M. Henzler, “Strained-Layer Growth and Islanding of Germanium on Si (111)-(7 × 7) Studied with STM,” Surface Science, Vol. 248, No. 3, 1991, pp. 321-331.
doi:10.1016/0039-6028(91)91178-Z
|
[8]
|
A. A. Shklyaev, M. Shibata and M. Ichikawa, “Instability of Two-Dimensional Layers in the Stranski-Krastanov Growth Mode of Ge on Si(111),” Physical Review B, Vol. 58, No. 23, 1998, pp. 15647-15651.
doi:10.1103/PhysRevB.58.15647
|
[9]
|
B. Voigtländer and A. Zinner, “Simultaneous Molecular Beam Epitaxy Growth and Scanning Tunneling Microscopy Imaging during Ge/Si Epitaxy,” Applied Physics Letters, Vol. 63, No. 2, 1993, pp. 3055-3057.
doi:10.1063/1.110256
|
[10]
|
A. A. Shklyaev, M. Shibata and M. Ichikawa, “Ge Islands on Si(111) at Coverages near the Transition from Two-Dimensional to Three-Dimensional Growth,” Surface Science, Vol. 416, No. 1, 1998, pp. 192-199.
doi:10.1016/S0039-6028(98)00580-9
|
[11]
|
S. Y. Shiryaev, F. Jensen, J. L. Hansen, J. W. Petersen and A. N. Larsen, “Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems,” Physical Review Letters, Vol. 78, No. 3, 1997, pp. 503-506.
doi:10.1103/PhysRevLett.78.503
|
[12]
|
B. Voigtländer and N. Theuerkauf, “Ordered Growth of Ge Islands above a Misfit Dislocation Network in a Ge Layer on Si(111),” Surface Science, Vol. 461, No. 1-3, 2000, pp. L575-L580.
doi:10.1016/S0039-6028(00)00620-8
|
[13]
|
S. A. Teys, “Features of Atomic Processes at the Formation of a Wetting Layer and Nucleation of Three-Dimensional Ge Islands on Si(111) and Si(100) Surfaces,” JETP Letters, Vol. 96, No. 12, 2013, pp. 794-802.
doi:10.1134/S0021364012240113
|
[14]
|
R. Gunnella, P. Castrucci, N. Pinto, I. Diavoli, D. Sébilleau and M. De Crescenzi, “X-Ray Photoelectron-Diffraction Study of Intermixing and Morphology at the Ge/ Si(001) and Ge/Sb/Si(001) Interface,” Physical Review B, Vol. 54, No. 12, 1996, pp. 8882-8891.
doi:10.1103/PhysRevB.54.8882
|
[15]
|
X. R. Qin, B. S. Swartzentruber and M. G. Lagally, “Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages,” Physical Review Letters, Vol. 85, No. 17, 2000, pp. 3660-3663. doi:10.1103/PhysRevLett.85.3660
|
[16]
|
F. Ratto, F. Rosei, A. Locatelli, S. Cherifi, S. Fontana, S. Heun, P.-D. Szkutnik, A. Sgarlata, M. De Crescenzi and N. Motta, “Composition of Ge(Si) Islands in the Growth of Ge on Si(111) by x-Ray Spectromicroscopy,” Journal of Applied Physics, Vol. 97, No. 4, 2005, pp. 043516-1-043516-8. doi:10.1063/1.1832747
|
[17]
|
T. I. Kamins, E. C. Carr, R. S. Williams and S. J. Rosner, “Deposition of Three-Dimensional Ge Islands on Si(001) by Chemical Vapor Deposition at Atmospheric and Reduced Pressures,” Journal of Applied Physics, Vol. 81, No. 1, 1997, pp. 211-219. doi:10.1063/1.364084
|
[18]
|
F. Boscherini, G. Capellini, L. Di Gaspare, M. De Seta, F. Rosei, A. Sgarlata, N. Motta and S. Mobilio, “Ge-Si Intermixing in Ge Quantum Dots on Si,” Thin Solid Films, Vol. 380, No. 1-2, 2000, pp. 173-175.
doi:10.1016/S0040-6090(00)01496-6
|
[19]
|
M. Valvo, C. Bongiorno, F. Giannazzo and A. Terrasi, “Localized Si Enrichment in Coherent Self-Assembled Ge Islands Grown by Molecular Beam Epitaxy on (001) Si Single Crystal,” Journal of Applied Physics, Vol. 113, No. 3, 2013, pp. 033513-1-033513-17.
doi:10.1063/1.4775772
|
[20]
|
Y. Nakamura, A. Murayama and M. Ichikawa, “Epitaxial Growth of High Quality Ge Films on Si(001) Substrates by Nanocontact Epitaxy,” Crystal Growth & Design, Vol. 11, No. 7, 2011, pp. 3301-3305. doi:10.1021/cg200609u
|
[21]
|
Y. Nakamura, T. Miwa and M. Ichikawa, “Nanocontact Heteroepitaxy of thin GaSb and AlGaSb Films on Si Substrates Using Ultrahigh-Density Nanodot Seeds,” Nanotechnology, Vol. 22, No. 26, 2011, pp. 265301-1-265301-7. doi:10.1088/0957-4484/22/26/265301
|
[22]
|
A. A. Shklyaev, M. Shibata and M. Ichikawa, “High-Density Ultrasmall Epitaxial Ge Islands on Si(111) Surfaces with a SiO2 Coverage,” Physical Review B, Vol. 62, No. 3, 2000, pp. 1540-1543.
doi:10.1103/PhysRevB.62.1540
|
[23]
|
A. A. Shklyaev and M. Ichikawa, “Extremely Dense Arrays of Germanium and Silicon Nanostructures,” Physics-Uspekhi, Vol. 51, No. 2, 2008, pp. 133-161.
doi:10.1070/PU2008v051n02ABEH006344
|
[24]
|
S. Ghosh, D. Leonhardt and S. M. Han, “Experimental and Theoretical Investigation of Thermal Stress Relief during Epitaxial Growth of Ge on Si Using Air-Gapped SiO2 Nanotemplates,” Applied Physics Letters, Vol. 99, No. 18, 2011, pp. 181911-1-181911-3.
doi:10.1063/1.3659320
|
[25]
|
V. Kuryliuk, O. Korotchenkov and A. Cantarero, “Carrier Confinement in Ge/Si Quantum Dots Grown with an Intermediate Ultrathin Oxide Layer,” Physical Review B, Vol. 85, No. 7, 2012, pp. 075406-1-075406-11.
doi:10.1103/PhysRevB.85.075406
|
[26]
|
N. Miyata, H. Watanabe and M. Ichikawa, “Thermal Decomposition of an Ultrathin Si Oxide Layer around a Si(001)-(2 × 1) Window,” Physical Review Letters, Vol. 84, No. 5, 2000, pp. 1043-1046.
doi:10.1103/PhysRevLett.84.1043
|
[27]
|
A. A. Shklyaev, M. Aono and T. Suzuki, “Influence of Growth Conditions on Subsequent Submonolayer Oxide Decomposition on Si(111),” Physical Review B, Vol. 54, No. 15, 1996, 10890-10895.
doi:10.1103/PhysRevB.54.10890
|
[28]
|
A. A. Shklyaev and S. M. Repinsky, “Investigation of Ge Surface Self-Diffusion by Determination of Changes in the Reflection Intensity Profiles of Low-Energy Electron Diffraction,” Soviet Physics Semiconductors, Vol. 14, No. 7, 1980, pp. 767-772.
|
[29]
|
B. Voigtländer, “Fundamental Processes in Si/Si and Ge/ Si Epitaxy Studied by Scanning Tunneling Microscopy during Growth,” Surface Science Reports, Vol. 43, No. 5-8, 2001, pp. 127-254.
doi:10.1016/S0167-5729(01)00012-7
|
[30]
|
N. Motta, A. Sgarlata, R. Calarco, Q. Nguyen, J. Castro Cal, F. Patella, A. Balzarotti and M. De Crescenzi, “Growth of Ge-Si(111) Epitaxial Layers: Intermixing, Strain Relaxation and Island Formation,” Surface Science, Vol. 406, No. 1-3, 1998, pp. 254-263.
doi:10.1016/S0039-6028(98)00121-6
|
[31]
|
M. Stoffel, Y. Fagot-Révurat, A. Tejeda, B. Kierren, A. Nicolaou, P. Le Fèvre, F. Bertran, A. Taleb-Ibrahimi and D. Malterre, “Electron-phonon Coupling on Strained Ge/Si(111)-(5 × 5) Surfaces,” Physical Review B, Vol. 86, No. 19, 2012, pp. 195438-1-195438-7.
doi:10.1103/PhysRevB.86.195438
|
[32]
|
H. -J. Gossmann, J. C. Bean, L. C. Feldman, E. G. McRae and I. K. Robinson, “7 × 7 Reconstruction of Ge(111) Surfaces under Compressive Strain,” Physical Review Letters, Vol. 55, No. 10, 1985, pp. 1106-1109.
doi:10.1103/PhysRevLett.55.1106
|
[33]
|
U. Köhler, O. Jusko, G. Pietsch, B. Müller and M. Henzler, “Strained-Layer Growth and Islanding of Germanium on Si(111)-(7 × 7) Studied with STM,” Surface Science, Vol. 248, No. 3, 1991, pp. 321-331.
doi:10.1016/0039-6028(91)91178-Z
|
[34]
|
K. N. Romanyuk, A. A. Shklyaev, B. Z. Olshanetsky and A. V. Latyshev, “Formation of Ge Clusters at a Si(111)-Bi-√3 × √3 Surface,” JETP Letters, Vol. 93, No. 11, 2011, pp. 661-666. doi:10.1134/S0021364011110105
|
[35]
|
G. Vastola, V. B. Shenoy, J. Guo and Y.-W. Zhang, “Coupled Evolution of Composition and Morphology in a Faceted Three-Dimensional Quantum Dot,” Physical Review B, Vol. 84, No. 3, 2011, pp. 035432-1-035432-7.
doi:10.1103/PhysRevB.84.035432
|
[36]
|
A. Laracuente, S. C. Erwin and L. J. Whitman, “Structure of Ge(113): Origin and Stability of Surface Self-Interstitials,” Physical Review Letters, Vol. 81, No. 23, 1998, pp. 5177-5180. doi:10.1103/PhysRevLett.81.5177
|
[37]
|
Z. Gai, R. G. Zhao, X. Li and W. S. Yang, “Faceting and Nanoscale Faceting of Ge(hhl) Surfaces around (113),” Physical Review B, Vol. 58, No. 8, 1998, pp. 4572-4578.
doi:10.1103/PhysRevB.58.4572
|
[38]
|
A. A. Stekolnikov and F. Bechstedt, “Shape of Free and Constrained Group-IV Crystallites: Influence of Surface Energies,” Physical Review B, Vol. 72, No. 12, 2005, p. 125326. doi:10.1103/PhysRevB.72.125326
|
[39]
|
J. T. Robinson, A. Rastelli, O. Schmidt and O. D. Dubon, “Global Faceting Behavior of Strained Ge Islands on Si,” Nanotechnology, Vol. 20, No. 8, 2009, Article ID: 085708. doi:10.1088/0957-4484/20/8/085708
|
[40]
|
A. A. Shklyaev, K. N. Romanyuk, A. V. Latyshev and A. V. Arzhannikov, “Effect of Dislocations on the Shape of Islands during Silicon Growth on the Oxidized Si(111) Surface,” JETP Letters, Vol. 93, No. 6, 2011, pp. 442-445.
doi:10.1134/S0021364011180147
|
[41]
|
Z. Gai, R. G. Zhao, W. Li, Y. Fujikawa, T. Sakurai and W. S. Yang, “Major Stable Surface of Silicon: Si(20 4 23),” Physical Review B, Vol. 64, No. 12, 2001, Article ID: 125201. doi:10.1103/PhysRevB.64.125201
|
[42]
|
M. Henzler, “Correlation between Surface Structure and Surface States at the Clean Germanium (111) Surface,” Journal of Applied Physics, Vol. 40, No. 9, 1969, pp. 3758-3765. doi:10.1063/1.1658268
|
[43]
|
B. Z. Olshanetsky, S. M. Repinsky and A. A. Shklyaev, “LEED Investigation of Germanium Surfaces Cleaned by Sulphide Films, Structural Transitions on Clean Ge(110) Surfaces,” Surface Science, Vol. 64, No. 1, 1977, pp. 224-236. doi:10.1016/0039-6028(77)90268-0
|
[44]
|
M. Kuzmin, M. J. P. Punkkinen, P. Laukkanen, J. J. K. Lang, J. Dahl, V. Tuominen, M. Tuominen, R. E. Perälä, T. Balasubramanian, J. Adell, B. Johansson, L. Vitos, K. Kokko and I. J. Väyrynen, “Surface Core-Level Shifts on Ge (111)-c(2 × 8): Experiment and Theory,” Physical Review B, Vol. 83, No. 24, 2011, p. 245319.
doi:10.1103/PhysRevB.83.245319
|
[45]
|
M. Henzler, “The Roughness of Cleaved Semiconductor Surfaces,” Surface Science, Vol. 36, No. 1, 1973, pp. 109-122. doi:10.1016/0039-6028(73)90249-5
|
[46]
|
B. Z. Olshanetsky, S. M. Repinsky and A. A. Shklyaev, “LEED Studies of Vicinal Surfaces of Germanium,” Surface Science, Vol. 69, No. 1, 1977, pp. 205-217.
doi:10.1016/0039-6028(77)90169-8
|
[47]
|
A. A. Shklyaev and M. Ichikawa, “Effect of Interfaces on Quantum Confinement in Ge Dots Grown on Si Surfaces with a SiO2 Coverage,” Surface Science, Vol. 514, No. 1-3, 2002, pp. 19-26.
doi:10.1016/S0039-6028(02)01602-3
|
[48]
|
M. Copel, M. C. Reuter, M. Horn von Hoegen and R. M. Tromp, “Influence of Surfactants in Ge and Si Epitaxy on Si (001),” Physical Review B, Vol. 42, No. 18, 1990, pp. 11682-11689.
doi:10.1103/PhysRevB.42.11682
|
[49]
|
B. Voigtlander, A. Zinner, T. Weber and H. P. Bonzel, “Modification of Growth Kinetics in Surfactant-Mediated Epitaxy,” Physical Review B, Vol. 51, No. 12, 1995, pp. 7583-7591. doi:10.1103/PhysRevB.51.7583
|
[50]
|
D. Kandel and E. Kaxiras, “Surfactant Mediated Crystal Growth of Semiconductors,” Physical Review Letters, Vol. 75, No. 14, 1995, pp. 2742-2745.
doi:10.1103/PhysRevLett.75.2742
|