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N. Motta, A. Sgarlata, R. Calarco, Q. Nguyen, J. Castro Cal, F. Patella, A. Balzarotti and M. De Crescenzi, “Growth of Ge-Si(111) Epitaxial Layers: Intermixing, Strain Relaxation and Island Formation,” Surface Science, Vol. 406, No. 1-3, 1998, pp. 254-263. doi:10.1016/S0039-6028(98)00121-6

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