Author(s)

Md. Khalilur Rahman^1*, Abul Monsur Mohammed Musa², Budrun Neher¹, Kawchar Ahmed Patwary¹, Mohammad Atiqur Rahman³, Md. Shariful Islam⁴

¹Department of Physics, Comilla University, Comilla, Bangladesh.
²Department of Physics, University of Chittagong, Chittagong, Bangladesh.
³Department of Chemistry, Comilla University, Comilla, Bangladesh.
⁴Department of ICT, Comilla University, Comilla, Bangladesh.

Electromigration is a main challenge in the pursuit of power electronics, because physical limit to increase current density in power electronics is electromigration (EM), whereas much higher electrical current and voltage are required for power electronics packaging. So the effect of EM is an important issue in applications where high current densities are used, such as in microelectronics and related structures (e.g., Power ICs). Since the structure size of integrated circuits (ICs) decreases and the practical significance of this effect increases, the result is EM failure. On the other hand, in the next generation power electronics technology electrical current density is expected to exceed 10⁷ A/cm² which is another challenge. This review work has been carried out to identify the mechanism of EM damage in power electronics (e.g., pure metallization and solder joints) and also how to control this kind of damage.

Voids and Hillocks, Interconnect, Solder Joint, Thermomigration, MTF, Reliability of IC

Rahman, M. , Musa, A. , Neher, B. , Patwary, K. , Rahman, M. and Islam, M. (2016) A Review of the Study on the Electromigration and Power Electronics. Journal of Electronics Cooling and Thermal Control, 6, 19-31. doi: 10.4236/jectc.2016.61002.