Materials Sciences and Applications

Vol.1 No.2(2010), Paper ID 2083, 6 pages

DOI:10.4236/msa.2010.12010

 

Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

 

Iikham G. Atabaev, Tojiddin M. Saliev, Erkin N. Bakhranov, Dilmurad Saidov, Khimmatali Juraev, Chin C. Tin, Victor Adedeji, Bakhtiyar G. Atabaev, Nilufar G. Saidkhanova

 

 

Copyright © 2010 Iikham G. Atabaev, Tojiddin M. Saliev, Erkin N. Bakhranov, Dilmurad Saidov, Khimmatali Juraev, Chin C. Tin, Victor Adedeji, Bakhtiyar G. Atabaev, Nilufar G. Saidkhanova et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


I. Atabaev, T. Saliev, E. Bakhranov, D. Saidov, K. Juraev, C. Tin, V. Adedeji, B. Atabaev and N. Saidkhanova, "Nonequilibrium Diffusion of Boron in SiC at Low Temperatures," Materials Sciences and Applications, Vol. 1 No. 2, 2010, pp. 53-58. doi: 10.4236/msa.2010.12010.

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