Nonequilibrium Diffusion of Boron in SiC at Low Temperatures


Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology.

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I. Atabaev, T. Saliev, E. Bakhranov, D. Saidov, K. Juraev, C. Tin, V. Adedeji, B. Atabaev and N. Saidkhanova, "Nonequilibrium Diffusion of Boron in SiC at Low Temperatures," Materials Sciences and Applications, Vol. 1 No. 2, 2010, pp. 53-58. doi: 10.4236/msa.2010.12010.

Conflicts of Interest

The authors declare no conflicts of interest.


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