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Yuan, X., Park, J.E., Wang, J., Zhao, E., Ahlgren, D.C., Hook, T., et al. (2008) Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology. IEEE Transactions on Device and Materials Reliability, 8, 501-508.
https://doi.org/10.1109/TDMR.2008.2002350
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