TITLE:
New Applications of the Noise Spectroscopy for Hydrogen Sensors
AUTHORS:
Ferdinand Gasparyan, Hrant Khondkaryan, Mikayel Aleksanyan
KEYWORDS:
Low-Frequency Noise, Hydrogen Sensor, Porous Semiconductor
JOURNAL NAME:
Journal of Modern Physics,
Vol.5 No.16,
October
30,
2014
ABSTRACT: Peculiarities
of the low-frequency noise spectroscopy of hydrogen gas sensors made on MgFeO4 n-type porous semiconductor covered by the palladium catalytic nanosize
particles are investigated. Behavior of the low-frequency noise spectral
density and its exponent value from sensitive layer thickness in the frequency
range 2 - 300 Hz are analyzed. Sensitivity of the sensor calculated by the
noise method is several tenth times higher as compared with the resistive
method. It is shown that besides of the well-known applications, noise
spectroscopy can be also used for definition of the unknown thickness of gas
sensitive layer, for definition of the sensitive layer subsurface role in the
formation of the low-frequency noises and for definition of the intensity of
trapping-detrapping processes of the gas molecules.