M. Liu, J. Zhang and K.Xu, “Interface Diffusion and Resistivity of Ni/Al Nanomultilayers,” Acta Metallurgica Sinica, Vol. 44, No. 3, 2008, pp. 357-360.

has been cited by the following article:

• TITLE: Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation

  AUTHORS: Chunguang Zhang, Hao Wang, Yishen Qiu

  KEYWORDS: Molecular Dynamics Simulation, Interface Diffusion, EAM Potential

  JOURNAL NAME: Engineering, Vol.3 No.3, March 7, 2011

  ABSTRACT: Molecular dynamics simulation of Ni/Al interface diffusion is carried out by Embedded Atom Method (EAM) potential. The problem how the temperature affects Ni/Al interface diffusion is discussed. The initial dynamic behavior of Ni/Al interface diffusion at high temperature is shown. The study in this letter is helpful to understand the origin of diffusion phenomenon.