Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation

DOI: 10.4236/eng.2011.33026   PDF   HTML   XML   4,831 Downloads   8,611 Views   Citations


Molecular dynamics simulation of Ni/Al interface diffusion is carried out by Embedded Atom Method (EAM) potential. The problem how the temperature affects Ni/Al interface diffusion is discussed. The initial dynamic behavior of Ni/Al interface diffusion at high temperature is shown. The study in this letter is helpful to understand the origin of diffusion phenomenon.

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C. Zhang, H. Wang and Y. Qiu, "Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation," Engineering, Vol. 3 No. 3, 2011, pp. 227-232. doi: 10.4236/eng.2011.33026.

Conflicts of Interest

The authors declare no conflicts of interest.


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