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Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation

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DOI: 10.4236/eng.2011.33026    4,497 Downloads   8,313 Views   Citations


Molecular dynamics simulation of Ni/Al interface diffusion is carried out by Embedded Atom Method (EAM) potential. The problem how the temperature affects Ni/Al interface diffusion is discussed. The initial dynamic behavior of Ni/Al interface diffusion at high temperature is shown. The study in this letter is helpful to understand the origin of diffusion phenomenon.

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The authors declare no conflicts of interest.

Cite this paper

C. Zhang, H. Wang and Y. Qiu, "Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation," Engineering, Vol. 3 No. 3, 2011, pp. 227-232. doi: 10.4236/eng.2011.33026.


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