Britton, G., Lauga-Larroze, E., Mir, S. and Galy, P. (2022) Design Methodology of a 28 nm FD-SOI Capacitive Feedback RF LNA Based on the ACM Model and Look-Up Tables. Solid-State Electronics, 194, Article ID: 1108340.
https://doi.org/10.1016/j.sse.2022.108340

has been cited by the following article:

• TITLE: Design of a Low Power Low-Noise Amplifier with Improved Gain/Noise Ratio

  AUTHORS: Raja Mahmou, Khalid Faitah

  KEYWORDS: LNA, Degeneracy, Noise Figure, Linearity, Power Consumption, Gain

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.12 No.1, January 26, 2024

  ABSTRACT: This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhance gain, minimize noise levels, and uphold low power consumption. The progression includes a shift to a cascode structure to further refine LNA parameters. Ultimately, with a 1.8 V bias, the achieved performance showcases a gain-to-noise figure ratio of 16 dB/0.5 dB, an IIP3 linearity at 5.1 dBm, and a power consumption of 3 mW. This architecture is adept at operating across a wide frequency band spanning from 0.5 GHz to 6 GHz, rendering it applicable in diverse RF scenarios.