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https://doi.org/10.1016/S0927-0248(00)00266-X

has been cited by the following article:

• TITLE: High Performance for Cu(In,Ga)Se2 Quaternary System-Based Solar Cells with Alternative Buffer Layers

  AUTHORS: Daouda Oubda, Marcel Bawindsom Kébré, Soumaïla Ouédraogo, Alain Diasso, François Zougmoré, Zacharie Koalga, Frédéric Ouattara

  KEYWORDS: Thin Film Solar Cells, CIGS Absorber, Alternative Buffer Layers, SCAPS-1D, Electrical Parameters

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.12 No.9, September 29, 2022

  ABSTRACT: In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as Jsc, Voc, QE and η of the quaternary system Cu(In,Ga)Se2 solar cells. The performance of Cu(In,Ga)Se2solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: JSC = 34.6 mA/cm2, VOC = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density JSC. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cellshave.