C. H. Pandis, N. Brilis, D. Tsamakis, H. A. Ali, S. Krishnamoorthy, A. A. Iliadis, “Role of Low O2 Pressure and Growth Temperature on Electrical Transport of PLD Grown ZnO Thin ?lms on Si Substrates,” Solid-State Electronics, Vol. 50, No. 6, 2006, pp. 1119-1123. doi:10.1016/j.sse.2006.04.025

has been cited by the following article:

• TITLE: Structural and Dielectric Properties of Sintering Zinc Oxide Bulk Ceramic

  AUTHORS: Mariem Chaari, Adel Matoussi, Zouheir Fakhfakh

  KEYWORDS: Zinc Oxide, Sintering Process, Micro Strain, Impedance Spectroscopy

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.7, July 29, 2011

  ABSTRACT: Undoped zinc oxide (ZnO) has been prepared at various growth temperatures by conventional sintering process. The morphology and crystalline properties of ZnO pellets were examined by scanning electron microscopy, atomic force microscopy and X-ray diffraction. It has revealed that the grain size and surface roughness tends to increase by increasing the sintering temperature. XRD analysis showed that all samples are polycrystalline with a hexagonal wurtzite structure. The alignment of ZnO grains along the (10.0) plane was enhanced as the temperature increased. Interestingly, the compressive stress was found to decrease drastically from –0.62 GPa at 700°C to –0.2 MPa at 1000°C. This improvement in film structure seems to enhance considerably the dielectric properties for the samples sintering at high temperatures. Results show an increase of dielectric constant and a decrease of electrical resistivity when increasing the sintering temperature.