Baribeau, J.M., Jackman, T.E., Houghton, D.C., Maigné, P. and Denhoff, M.W. (1988) J. Appl. Phys., 63, 5738-5746. https://doi.org/10.1063/1.340312

has been cited by the following article:

• TITLE: TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon

  AUTHORS: Junji Yamanaka, Noritaka Usami, Sevak Amtablian, Alain Fave, Mustapha Lemiti, Chiaya Yamamoto, Kiyokazu Nakagawa

  KEYWORDS: Porous Silicon, Silicon Germanium, Strain Relaxation, Strained Silicon, Nanostructure, High-Mobility Semiconductors, Transmission Electron Microscopy

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 4, 2017

  ABSTRACT: Strain-relaxed SiGe is an attractive material for use as a substrate of strained Si, in which carrier mobility is higher than that of bulk Si. The concept of this study is the use of porous Si as a sponge like substrate so that a SiGe lattice can relax without introducing dislocations. We produced porous Si specimens by electrochemical anodization and annealed them under a H2 atmosphere. Then, SiGe thin films were grown by gas-source molecular beam epitaxy. We observed the microstructure of the specimens using transmission electron microscopy. The result showed that we succeeded in producing a single-crys- tal continuous Si0.73Ge0.27 film with a 10% relaxation ratio and a low dislocation density on porous Si.