Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device
Samir Labiod, Saida Latreche, Mourad Bella, Christian Gontrand
DOI: 10.4236/jemaa.2011.310067   PDF    HTML   XML   6,944 Downloads   12,526 Views   Citations


In this work, we present a numerical model to solve the drift diffusion equations coupled with electromagnetic model, where all simulations codes are implemented using MATLAB code software. As first, we present a one-dimensional (1-D) PIN diode structure simulation achieved by solving the drift diffusion model (DDM). Backward Euler algorithm is used for the discretization of the proposed model. The aim is to accomplish time-domain integration. Also, finite different method (FDM) is considered to achieve space-Domain mesh. We introduced an iterative scheme to solve the obtained matrix systems, which combines the Gummel’s iteration with an efficient direct numerical UMFPACK method. The obtained solutions of the proposed algorithm provide the time and space distribution of the unknown functions like electrostatic potential and carrier’s concentration for the PIN diode. As second case, the finite-difference time-domain (FDTD) technique is adopted to analyze the entire 3-D structure of the stripline circuit including the lumped element PIN diode. The microwave circuit is located in an unbounded medium, requiring absorbing boundaries to avoid nonphysical reflections. Active device results were presented and show a good agreement with other reference. Electromagnetic results are qualitatively in agreement with other results obtained using SILVACO-TCAD.

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S. Labiod, S. Latreche, M. Bella and C. Gontrand, "Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device," Journal of Electromagnetic Analysis and Applications, Vol. 3 No. 10, 2011, pp. 423-429. doi: 10.4236/jemaa.2011.310067.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] K. J. Willis, J. S. Ayubi-Moak, S. C. Hagness and I. Knezevic, “Absorbing Global Modeling of Carrier-Field Dynamics in Semiconductors Using EMC-FDTD,” Journal of Computational Electronics, Vol. 8. No. 2, 2009, pp. 153-171. doi:10.1007/s10825-009-0280-4
[2] M. Sirbu, B. Sebastien, P. Lepauland F. Aniel, “Coupling 3-D Maxwell’s and Boltzmann’s Equations for Analyzing a Terahertz Photoconductive Switch,” IEEE Transactions on Microwave Theory and Techniques, Vol. 53, No. 9, 2005, pp. 2991-2998. doi:10.1109/TMTT.2005.854228
[3] W. Sui, D. Christensen and C. Durney, “Extending the Two-Dimensional FD-TD Method to Hybrid Electromagnetic Systems with Active and Passive Lumped Elements,” IEEE Transactions on Microwave Theory and Techniques, Vol. 40, No. 4, 1992, pp. 724-730. doi:10.1109/22.127522
[4] K. M. Sze and K. K. Ng, “Physics of Semiconductor Devices,” 3rd Edition, Wiley, Hoboken, 2007, pp. 40-63.
[5] A. Quarteroni, R. Sacco and F. Saleri, “Numerical Mathematics,” Springer, Berlin, 2000.
[6] R. Mirzavand, A. Abdipour and G. Moradi, “Full-Wave Semiconductor Devices Simulation Using ADI-FDTD Method,” Progress in Electromagnetic Research M, Vol. 11, 2010, pp. 191-202. doi:10.2528/PIERM10010604
[7] S. K. Khaitan, J. D. McCalley and Q. Chen, “Multifrontal Solver for Online Power System Time-Domain Simulation,” IEEE Transactions on Power Systems, Vol. 23, No. 4, 2008, pp. 1727-1737. doi:10.1109/TPWRS.2008.2004828
[8] A. Aste and R. Vahldieck, “Time-Domain Simulation of the Full Hydrodynamic Model,” International Journal of Numerical Modeling, Vol. 16, No. 12, 2003, pp. 161-174. doi:10.1002/jnm.491
[9] M. Movahhedi and A. Abdipour, “Efficient Numerical MeThods for Simulation of High-Frequency Active Device,” IEEE Transactions on Microwave Theory and Techniques, Vol. 54, 2006, pp. 2636-2645. doi:10.1109/TMTT.2006.872937
[10] J. E. Marsden, L. Sirovich and S. S. Antman, “Computational Electromagnetics,” Springer, Berlin, 2005.
[11] J. Mix, J. Dixon, Z. Popovic and M. Piket-May, “Incorporating Non-Linear Lumped Element in FDTD: The Equivalent Source Method,” International Journal of Numerical Modelling: Electronic Networks, Devices, Vol. 12, No. 1-2, 1999, pp. 157-170. doi:10.1002/(SICI)1099-1204(199901/04)12:1/2<157::AID-JNM323>3.0.CO;2-V
[12] S. G. Talocia, I. S. Stievano and F. G. Canavero, “Hybri- dization of FDTD and device behavioral-modeling techniques,” IEEE Transactions on Electromagnetic Compatibility, Vol. 45, No. 1, 2003, pp. 31-42. doi:10.1109/TEMC.2002.808035
[13] H. Chuang and L. Kuo, “3-D FDTD Design Analysis of a 2.4-Ghz Polarization-Diversity Printed Dipole Antenna with Integrated Balun and Polarization-Switching Circuit for WLAN and Wireless Communication Applications,” IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 2, 2003, pp. 374-381. doi:10.1109/TMTT.2002.807838
[14] M. N. O. Sadiku, “Numerical Techniques in Electro- magnetics,” CRC Press, Boca Raton, 2001.
[15] P. Ciamolini, L. Roselli and G. Stopponi, “Mixed-Mode Circuit Simulation with Full-Wave Analysis of Interconnections,” IEEE Transactions on Electron Devices, Vol. 44, No. 11, 1997, pp. 2098-2105. doi:10.1109/16.641390
[16] F. Zheng, Z. chen and J. Zhang, “Toward the Development of a Three-Dimensional Unconditionally Stable Finite- Difference Time-Domain Method,” IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 9, 2000, pp. 1550-1558. doi:10.1109/22.869007
[17] O. Gonzalez, J. A. Pereda, A. Herrera and A. Vegas, “An Extension of the Lumped-Network FDTD Method to Linear Two-Port Lumped Circuits,” IEEE Transactions on Microwave Theory and Techniques, Vol. 54, No. 7, 2006, pp. 3045-3051. doi:10.1109/TMTT.2006.877058
[18] X. Zhang and K. K. Mei, “Time-Domain Finite Difference Approach to the Calculation of the Frequency-Dependent Characteristics of Microstrip Discontinuities,” IEEE Transactions on Microwave Theory and Technique, Vol. 36, No. 12, 1988, pp. 1775-1787.

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