Dopant Implantation into the Silicon Substrate with Non-Planar Surface
Gennady A. Tarnavsky, Evgenii V. Vorozhtsov
DOI: 10.4236/epe.2010.22011   PDF    HTML     4,003 Downloads   6,726 Views   Citations


The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.

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G. Tarnavsky and E. Vorozhtsov, "Dopant Implantation into the Silicon Substrate with Non-Planar Surface," Energy and Power Engineering, Vol. 2 No. 2, 2010, pp. 73-77. doi: 10.4236/epe.2010.22011.

Conflicts of Interest

The authors declare no conflicts of interest.


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