has been cited by the following article(s):
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[1]
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Deflecting Dendrites by Introducing Compressive Stress in Li7La3Zr2O12 Using Ion Implantation
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Small,
2024 |
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[2]
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ON DRAIN OF RADIATION DEFECTS FROM WORKING AREA OF AN INTEGRATED CIRCUIT
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Nanoscience and Technology: An International …,
2024 |
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[3]
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On decreasing of quantity of radiation defects in working area of an integrated circuit by organization by drainage Management and Product Development
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J. Mater. Environ. Sci., 14 (11), 1160,
2023 |
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[4]
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On organization of drainage of radiation defects from working area of an integrated circuit
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ISSS Journal of Micro and Smart Systems,
2023 |
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[5]
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On Prognosis of Changing of the Rate of Diffusion of Radiation Defects, Generated during Ion Implantation, with Increasing of Depth of their Penetration
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2019 |
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[6]
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On approach to model stabilization of anomalous distribution of concentration of radiation defects in a multilayer structure
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Multidiscipline Modeling in Materials and Structures,
2018 |
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[7]
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On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data
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Journal of Semiconductors,
2018 |
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[8]
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On Model of Stabilization of Distribution of Concentration of Radiation Defects in a Multilayer Structure
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Advanced Science, Engineering and Medicine,
2017 |
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[9]
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Computer simulation center in Internet
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arXiv preprint arXiv:1101.0664,
2011 |
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[10]
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Cloud Computing in Science and Engineering and the “SciShop. ru” Computer Simulation Center
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Engineering, Technology & Applied Science Research? ,
2011 |
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[11]
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ВОЗМОЖНОСТИ ОБЛАЧНОГО ВЫЧИСЛИТЕЛЬНОГО ЭКСПЕРИМЕНТА ПО ПЛАНИРОВАНИЮ ДОПИНГ-СТРУКТУР ДОНОРНЫХ И АКЦЕПТОРНЫХ ПРИМЕСЕЙ ФОСФОРА, МЫШЬЯКА И БОРА, ИМПЛАНТИРОВАННЫХ В ПЛАСТИНУ КРЕМНИЯ СО СЛОЖНЫМ НАНОРЕЛЬЕФОМ ПОВЕРХНОСТИ
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ВОЗМОЖНОСТИ ОБЛАЧНОГО ВЫЧИСЛИТЕЛЬНОГО ЭКСПЕРИМЕНТА ПО ПЛАНИРОВАНИЮ ,
2011 |
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[12]
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ВОЗМОЖНОСТИ ОБЛАЧНОГО ВЫЧИСЛИТЕЛЬНОГО ЭКСПЕРИМЕНТА ПО ПЛАНИРОВАНИЮ ДОПИНГ-СТРУКТУР ДОНОРНЫХ И …
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ГА Тарнавский
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[1]
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Deflecting Dendrites by Introducing Compressive Stress in Li7La3Zr2O12 Using Ion Implantation
Small,
2024
DOI:10.1002/smll.202307515
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[2]
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ON DRAIN OF RADIATION DEFECTS FROM WORKING AREA OF AN INTEGRATED CIRCUIT
Nanoscience and Technology: An International Journal,
2024
DOI:10.1615/NanoSciTechnolIntJ.2023049700
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[3]
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On organization of drainage of radiation defects from working area of an integrated circuit
ISSS Journal of Micro and Smart Systems,
2024
DOI:10.1007/s41683-023-00121-3
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[4]
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On organization of drainage of radiation defects from working area of an integrated circuit
ISSS Journal of Micro and Smart Systems,
2023
DOI:10.1007/s41683-023-00121-3
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[5]
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On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data
Journal of Semiconductors,
2018
DOI:10.1088/1674-4926/39/5/053001
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[6]
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On approach to model stabilization of anomalous distribution of concentration of radiation defects in a multilayer structure
Multidiscipline Modeling in Materials and Structures,
2018
DOI:10.1108/MMMS-09-2017-0103
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[7]
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Cloud Computing in Science and Engineering and the “SciShop.ru” Computer Simulation Center
Engineering, Technology & Applied Science Research,
2011
DOI:10.48084/etasr.87
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