Effect of Temperature Dependence on Electrical Characterization of p-n GaN Diode Fabricated by RF Magnetron Sputtering

Thi Tran Anh Tuan^1,2, Dong-Hau Kuo^1*, Cheng-Che Li¹, Guan-Zhang Li¹

¹Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taiwan.
²School of Basic Sciences, Tra Vinh University, Tra Vinh, Vietnam.

DOI: 10.4236/msa.2015.69083                

Abstract

The p-n junction GaN diodes were all fabricated by sputtering technique with cermet targets for p- and n-type GaN and metal targets for electrodes. The interface of these p-n junction GaN diodes examined by high-resolution transition electron microscopy was clear and distinguishable. Lattice images identified the complete dissolution of Mg into the Ga site. At the room temperature, the diode had the turn-on voltage of 2.2 V, the leakage current of 2.2 × 10^–7 A, the breakdown voltage of –6 V, the barrier height of 0.56 eV, ideality factor of 5.0 by I (current)-V (voltage) test and 5.2 derived from the Cheungs’ method, and series resistance of 560 Ω. These electrical properties were investigated at different testing temperatures from room temperature to 200°C. The temperature dependence in the I-V characteristics of the p-n diodes can be successfully explained on the basis of thermionic-emission mode.

Keywords

p-n GaN Diode, I-V Measurement, Barrier Height, Leakage Current, Cheungs’ Method

Conflicts of Interest

The authors declare no conflicts of interest.

References

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