Effect of Temperature Dependence on Electrical Characterization of p-n GaN Diode Fabricated by RF Magnetron Sputtering


The p-n junction GaN diodes were all fabricated by sputtering technique with cermet targets for p- and n-type GaN and metal targets for electrodes. The interface of these p-n junction GaN diodes examined by high-resolution transition electron microscopy was clear and distinguishable. Lattice images identified the complete dissolution of Mg into the Ga site. At the room temperature, the diode had the turn-on voltage of 2.2 V, the leakage current of 2.2 × 107 A, the breakdown voltage of 6 V, the barrier height of 0.56 eV, ideality factor of 5.0 by I (current)-V (voltage) test and 5.2 derived from the Cheungs’ method, and series resistance of 560 Ω. These electrical properties were investigated at different testing temperatures from room temperature to 200°C. The temperature dependence in the I-V characteristics of the p-n diodes can be successfully explained on the basis of thermionic-emission mode.

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Tuan, T. , Kuo, D. , Li, C. and Li, G. (2015) Effect of Temperature Dependence on Electrical Characterization of p-n GaN Diode Fabricated by RF Magnetron Sputtering. Materials Sciences and Applications, 6, 809-817. doi: 10.4236/msa.2015.69083.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Cao, J., Laroche, J.A., Ren, F., Peaton, S.J., Lothian, J.A., Singh, R.K., Wilson, R.G., Guo, H.J. and Pennycook, S.J. (1999) Implanted p-n Junctions in GaN. Solid-State Electron, 43, 1235-1238.
[2] Lee, M.L., Sheu, J.K., Yeh, L.S., Tsai, M.S., Kao, C.J., Tun, C.J., Chang, S.J. and Chi, G.C. (2002) GaN p-n Junction Diode Formed by Si Ion Implantation into p-GaN. Solid-State Electron, 46, 2179-2183.
[3] Baik, K.H., Irokawa, Y., Ren, F., Pearton, S.J., Park, S.S. and Park, Y.J. (2003) Temperature Dependence of Forward Current Characteristics of GaN Junction and Schottky Rectifiers. Solid-State Electron, 47, 1533-1538.
[4] Lee, C.R., Yeon, J.M., Choi, D.K. and Ahn, H.K. (2001) The Effect of p-GaN: Mg Layers on the Turn-On Voltage of p-n Junction LED. Journal of Crystal Growth, 222, 459-464.
[5] Gupta, R.K., Yakuphanoglu, F., Ghosh, K. and Kahol, P.K. (2011) Fabrication and Characterization of p-n Junctions Based on ZnO and CuPc. Microelectronic Engineering, 88, 3067-3069.
[6] Hwang, K., Kang, S.H., Lim, J.H., Yang, E.J., Oh, J.Y. and Park, S.J. (2005) p-ZnO/n-GaN Heterostructure ZnO Light-Emitting Diodes. Applied Physics Letters, 86, Article ID: 222101.
[7] Liu, Y.J., Guo, D.F., Chua, K.F., Cheng, S.Y., Liou, J.K., Chen, L.Y., Tsai, T.H., Huang, C.C., Chen, T.Y., Hsua, C.S., Tsai, T.Y. and Liu, W.C. (2011) Improved Current-Spreading Performance of an InGaN-Based Light-Emitting Diode with a Clear p-GaN/n-GaN Barrier Junction. Displays, 32, 330-333.
[8] Park, Y.S., Park, C.M., Lee, J.W., Cho, H.Y., Kang, T.W., Yoo, K.H., Son, M.S. and Han, M. (2008) Electrical Transport Properties of a Nanorod GaN p-n Homo Junction Grown by Molecular-Beam Epitaxy. Journal of Applied Physics, 103, Article ID: 066107.
[9] Park, Y.S., Park, C.M., Park, C.J., Cho, H.J., Lee, S.J., Kang, T.W., Lee, S.H., Oh, J.E., Yoo, K.H. and Son, M.S. (2006) Electron Trap Level in a GaN Nanorod p-n Junction Grown by Molecular-Beam Epitaxy. Applied Physics Letters, 88, Article ID: 192104.
[10] Mohd Yusoff, M.Z., Hassan, Z., Ahmed, N.M., Hassan, H., Abdullah, M.J. and Rashid, M. (2013) pn-Junction Photo-diode Based on GaN Grown on Si (111) by Plasma-Assisted Molecular Beam Epitaxy. Materials Science in Semicon-ductor Processing, 16, 1859-1864.
[11] Shen, Y.W., Chen, X., Yan, X.Q., Yi, F., Bai, Z.M., Zheng, X., Lin, P. and Zhang, Y. (2014) Low-Voltage Blue Light Emission from n-ZnO/p-GaN Heterojunction Formed by RF Magnetron Sputtering Method. Current Applied Physics, 14, 345-348.
[12] Li, C.C. and Kuo, D.H. (2014) Effects of Growth Temperature on Electrical and Structural Properties of Sputtered GaN Films with a Cermet Target. Journal of Materials Science: Materials in Electronics, 25, 1404-1409.
[13] Li, C.C. and Kuo, D.H. (2014) Material and Technology Developments of the Totally Sputtering-Made p/n GaN Diodes for Cost-Effective Power Electronics. Journal of Materials Science: Materials in Electronics, 25, 1942-1948.
[14] Tuan, T.T.A., Kuo, D.H., Lin, K.F. and Li, G.Z. (2015) Temperature Dependence of Electrical Characteristics of n-InxGa1-xN/p-Si Hetero-Junctions Made Totally by RF Magnetron Sputtering. Thin Solid Films, 589, 182-187.
[15] Tuan, T.T.A. and Kuo, D.H. (2015) Characteristics of RF Reactive Sputter-Deposited Pt/SiO2/n-InGaN MOS Schottky Diodes. Materials Science in Semiconductor Processing, 30, 314-320.
[16] Ravinandan, M., Rao, P.K. and Reddy, V.R. (2008) Temperature Dependence of Current-Voltage (I-V) Characteristics of Pt/Au Schottky Contacts on N-Type GaN. Journal of Optoelectronics and Advanced Materials, 10, 2787-2792.
[17] Kumar, A., Vinayak, S. and Singh, R. (2013) Micro-Structural and Temperature Dependent Electrical Characterization of Ni/GaN Schottky Barrier Diodes. Current Applied Physics, 13, 1137-1142.
[18] Kumar, A., Arafin, S., Amann, M.C. and Kumar, R.S. (2013) Temperature Dependence of Electrical Characteristics of Pt/GaN Schottky Diode Fabricated by UHV E-Beam Evaporation. Nanoscale Research Letters, 8, 481.
[19] Reddy, N.N., Reddy, V.R. and Choi, C.J. (2011) Influence of Rapid Thermal Annealing Effect on Electrical and Structural Properties of Pd/Ru Schottky Contacts to N-Type GaN. Materials Chemistry and Physics, 130, 1000-1006.
[20] Cheung, S.K. and Cheung, N.W. (1985) Extraction of Schottky Diode Parameters from Forward Current-Voltage Characteristics. Applied Physics Letters, 49, 85.
[21] Hsueh, K.P. (2011) Temperature Dependent Current-Voltage Characteristics of n-MgxZn1-xO/p-GaN Junction Diodes. Microelectronic Engineering, 88, 1016-1018.
[22] Hsueh, K.P., Cheng, P.W., Lin, W.Y., Chiu, H.C., Wang, H.C., Sheu, J.K. and Yeh, Y.H. (2014) Temperature-De-pendent Current-Voltage Characteristics of Al-Doped MgxZn1-xO/AlGaN n-p Junction Diodes. ECS Journal of Solid State Science and Technology, 3, Q65-Q68.
[23] Cheng, G.S., Kolmakov, A., Zhang, Y.X., Moskovits, M., Munden, R., Reed, M.A., Wang, G.M., Moses, D. and Zhang, J.P. (2003) Current Rectification in a Single GaN Nanowire with a Well-Defined p-n Junction. Applied Physics Letters, 83, 1578.

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