Simple General Purpose Ion Beam Deceleration System Using a Single Electrode Lens

J. Lopes¹, J. Rocha²

¹Instituto Superior de Engenharia de Lisboa, Rua Conselheiro Emídio Navarro, Lisbon, Portugal.
²Instituto de Plasmas e Fusão Nuclear, Campus Tecnológico e Nuclear, Instituto Superior Técnico, Lisboa, Portugal.

DOI: 10.4236/wjet.2015.33014                

Abstract

Ion beam deceleration properties of a newly developed low-energy ion beam implantation system were studied. The objective of this system was to produce general purpose low-energy (5 to 15 keV) implantations with high current beam of hundreds of μA level, providing the most wide implantation area possible and allowing continuously magnetic scanning of the beam over the sample(s). This paper describes the developed system installed in the high-current ion implanter at the Laboratory of Accelerators and Radiation Technologies of the Nuclear and Technological Cam-pus, Sacavém, Portugal (CTN).

Keywords

Deceleration, Low Energy, Positive Ion Beam

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	Ziegler, J.F. (2006) Ion Implantation: Science and Technology. 6th Edition, Academic Press, Inc., Yorktown Heights, New York.
[2]	Kase, M., Kikuchi, Y., Kubo, T., Niwa, H. and Fukuda, T. (1998) Issues of Ultra Shallow Junction Formation Using Sub-1 keV Ion Implantation. 1998 International Conference on Ion Implantation Technology, Proceedings, Vol. 1 Kyoto, 22-26 June 1998, 110-113. http://dx.doi.org/10.1109/IIT.1999.812064
[3]	Graf, M.A., Vanderberg, B., Benveniste, V. and Tieger, D.R. (2002) Low Energy Ion Beam Transport. Proceedings of the 14th International Conference on Ion Implantation Technology, New Mexico, 27-27 September 2002, 359-364. http://dx.doi.org/10.1109/IIT.2002.1258015
[4]	Abdelrahman, M.M. (2008) Ion Beam Simulation Using a Three-Electrode Diaphragm Einzel Lens System. Journal of Nuclear and Radition Physics, 3, 93-100.
[5]	Dahl, D.A. (2000) Simion 3D Version 8.0—Users’s Manual. Idaho National Engineering and Environmental Laboratory, I D 3415.
[6]	Sise, O., Ulu, M. and Dogan, M. (2005) Multi-Element Cylindrical Electrostatic Lens Systems for Focusing and Controlling Charged Particles. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 554, 114-131. http://dx.doi.org/10.1016/j.nima.2005.08.068
[7]	Purcell, E.M. (1973) Curso de Física de Berkeley Volume 2. Editora Edgard Blucher 1973.
[8]	D. Halliday, D., Resnick, R. and Krane, K.S. (1995) Fundamentos de Física. Livros Técnicos e Científicos.
[9]	Hong, S.N., Ruggles, G.A., Paulos, J.J., Wortman J.J. and Ozturk, M.C. (1988) Formation of Ultrashallow p+-n Junctions by Low-Energy Boron Implantation Using a Modified Ion Implanter. Applied Physics Letters, 53, 1741-1743. http://dx.doi.org/10.1063/1.100470
[10]	Lopes, J.G., Rocha, J., Redondo, L.M. and Alegria, F.C. (2011) High Resolution Ion Beam Profile Measurement System. 13th International Conference on Accelerator and Large Experimental Physics Control Systems - Proceedings, 10-14 October 2011, Grenoble, 164-167.
[11]	Shimizu, S., Sasaki, N., Ogata, S. and Tsukakoshi, O. (1996) Ion Beam Deceleration Characteristics of a High-Current, Mass-Separated, Low-Energy Ion Beam Deposition System. Review of Scientific Instruments, 67, 3664-3671. http://dx.doi.org/10.1063/1.1147132
[12]	Ranganathan, R., Krull, W., Sundstrom, H. and Mack, M. (1998) Characterization of a High Current Ultra Low Energy Ion Implanter. 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, 22-26 June 1998, 618-621. http://dx.doi.org/10.1109/IIT.1999.812192
[13]	Fukaya, T., Hara, S., Tanaka, Y., Matsumoto, S., Suzuki, T., Fuse, G., et al. (2008) Formation of Ultra-Shallow Junction with ~10 nm in Si Combined with Low Temperature and Laser Annealing. The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), 10-14 November 2008, Kona, Hawaii. http://www.riam.kyushu-u.ac.jp/nano/hawaii2008/index.html http://www.researchgate.net/publication/240632078_Formation_of_Ultra-shallow_Junction_with _%2A10_nm_in_Si_Combined_with_Low_Temperature_and_Laser_Annealing