[1]
|
Fahey, P.M., Griffin, P.B. and Plummer, J.D. (1989) Point Defects and Dopant Diffusion in Silicon. Reviews of Modern Physics, 61, 289-384. http://dx.doi.org/10.1103/RevModPhys.61.289
|
[2]
|
Michel, A.E., Rausch, W., Ronsheim, P.A. and Kastl, R.H. (1987) Rapid Annealing and the Anomalous Diffusion of Ion-Implanted Boron into Silicon. Applied Physics Letters, 50, 416-418. http://dx.doi.org/10.1063/1.98160
|
[3]
|
Servidoli, M., Sourek, Z. and Solmi S. (1987) Some Aspects of Damage Annealing in Ion-Implanted Silicon: Discussion in Terms of Dopant Anomalous Diffusion. Journal of Applied Physics, 62, 1723-1728. http://dx.doi.org/10.1063/1.339600
|
[4]
|
Pichler, P. and Stiebel, D. (2002) Current Status of Models for Transient Phenomena in Dopant Diffusion and Activation. Nuclear Instruments and Methods in Physics Research Section B, 186, 256-264. http://dx.doi.org/10.1016/S0168-583X(01)00947-8
|
[5]
|
Fiory, A. (2002) T. Recent Developments in Rapid Thermal Processing. Journal of Electronic Materials, 31, 981-987. http://dx.doi.org/10.1016/S0168-583X(01)00947-8
|
[6]
|
Solmi, S. and Bersani, M. (2000) Effects of Donor Concentration on Transient Enhanced Diffusion of Boron in Silicon. Journal of Applied Physics, 87, 3696-3700. http://dx.doi.org/10.1063/1.372402
|
[7]
|
Tishkovskii, E.G., Obodnikov, V.I., Taskin, A.A., Feklistov, V. and Seryapin, V.G. (2000) Redistribution of Phosphorus Implanted into Silicon Doped Heavily with Boron. Semiconductors, 34, 629-633. http://dx.doi.org/10.1134/1.1188043
|
[8]
|
Moriya, N., Feldman, L.C., Luftman, H.S., King, C.A., Bevk, J. and Freer, B. (1993) Boron Diffusion in Strained Si1-x Ge-x Epitaxial Layers. Physical Review Letters, 71, 883-886. http://dx.doi.org/10.1103/PhysRevLett.71.883
|
[9]
|
Cowern, N.E.B., Zalm, P.C., van der Sluis, P., Gravesteijn, D.J. and de Boer, W.B. (1994) Diffusion in Strained SiGe. Physical Review Letters, 72, 2585-2588. http://dx.doi.org/10.1103/PhysRevLett.72.2585
|
[10]
|
Kuo, P., Hoyt, J.L., Gibbons, J.F., Turner, J.E. and Lefforge, D. (1995) Effects of Strain on Boron Diffusion in Si and Si1-x Gex. Applied Physics Letters, 66, 580-582. http://dx.doi.org/10.1063/1.114019
|
[11]
|
Zangenberg, N.R., Fage-Pedersen, J., Hansen, J.L. and Larsen A.N. (2003) Boron and Phosphorus Diffusion in Strained and Relaxed Si and SiGe. Journal of Applied Physics, 94, 3883-3891. http://dx.doi.org/10.1063/1.1602564
|
[12]
|
Wang, C.C., Sheu, Y.M., Liu, S., Duffy, R., Heringa, A., Cowern, N.E.B. and Griffin, P.B. (2005) Boron Diffusion in Strained and Strain-Relaxed SiGe. Materials Science and Engineering: B, 124-125, 39-44.
|
[13]
|
Lever, R.F., Bonar, J.M. and Willoughby, A.F.W. (1998) Boron Diffusion across Silicon-Silicon Germanium Boundaries. Journal of Applied Physics, 83, 1988-1994. http://dx.doi.org/10.1063/1.366927
|
[14]
|
Zangenberg, N.R., Fage-Pedersen, J., Hansen, J.L. and Larsen, A.N. (2001) Boron Diffusion in Strained and Relaxed Si1-xGex. Defect and Diffusion Forum, 194-199, 703.
|
[15]
|
Uppal, S., Willoughby, A.F.W., Bonar, J.M., Evans, A.G.R., Cowern, N.E.B., Morris, R. and Dowsett, M.G. (2001) Ion-Implantation and Diffusion Behavior of Boron in Germanium. Physica B: Condensed Matter, 525, 308-310.
|
[16]
|
Bang, J., Kang, J., Lee, W.J., Chang, K.J. and Kim, H. (2007) Chemical Bonding Effect of Ge Atoms on B Diffusion in Si. Physical Review B, 76, Article ID: 064118. http://dx.doi.org/10.1103/PhysRevB.76.064118
|
[17]
|
Car, R., Kelly, R., Oshiyama, A. and Pantelides, S.T. (1985) Microscopic Theory of Impurity-Defect Reactions and Impurity Diffusion in Silicon. Physical Review Letters, 54, 360-363. http://dx.doi.org/10.1103/PhysRevLett.54.360
|
[18]
|
Nichols, C.S., de Walle, C.G. and Pantelides, S.T. (1989) Mechanisms of Equilibrium and Non-Equilibrium Diffusion of Dopants in Silicon. Physical Review Letters, 62, 1049-1052. http://dx.doi.org/10.1103/PhysRevLett.62.1049
|
[19]
|
Zhu, J., de la Rubia, T.D., Yang, L.H., Mailhiot, C. and Gilmer, G.H. (1996) Pseudopotential Calculations of B Diffusion and Pairing in Si. Physical Review B, 54, 4741-4747. http://dx.doi.org/10.1103/PhysRevB.54.4741
|
[20]
|
Jung, M.Y.L., Gunawan, R., Braatz, R.D. and Seebauer, E.G. (2004) Pair Diffusion and Kick-Out: Contributions to Di- ffusion of Boron in Silicon. AIChE Journal, 50, 3248-3256. http://dx.doi.org/10.1002/aic.10220
|
[21]
|
Bang, J., Kim, H., Kana, J., Lee, W.J. and Chang, K.J. (2007) Retardation of Boron Diffusion in SiGe Alloy. Physica B: Condensed Matter, 401-402, 196-199. http://dx.doi.org/10.1016/j.physb.2007.08.145
|