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Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature

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DOI: 10.4236/opj.2014.45010    2,337 Downloads   3,150 Views   Citations

ABSTRACT

We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Sapkota, D. , Kayastha, M. , Takahashi, M. and Wakita, K. (2014) Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature. Optics and Photonics Journal, 4, 99-103. doi: 10.4236/opj.2014.45010.

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