Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature

DOI: 10.4236/opj.2014.45010   PDF   HTML     2,497 Downloads   3,350 Views   Citations

Abstract

We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.

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Sapkota, D. , Kayastha, M. , Takahashi, M. and Wakita, K. (2014) Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature. Optics and Photonics Journal, 4, 99-103. doi: 10.4236/opj.2014.45010.

Conflicts of Interest

The authors declare no conflicts of interest.

References

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