Theoretical Study of Electronic Transmission in Resonant Tunneling Diodes Based on GaAs/AlGaAs Double Barriers under Bias Voltage


In this paper, we theoretically study the quantum size effects on the electronic transmission and current density of the electrons in GaAs/AlGaAs resonant tunneling diodes by solving the coupled equations Schrodinger-Poisson self-consistently. It is found that the resonant peaks of the trans-mission coefficients shift towards the lower energy regions as the applied bias voltage increases. Our results indicate that the transmission coefficient depends strongly on the variation of the thickness of collector and emitter. We also study the effect of the doping concentration located in the emitter and collector regions on the transmission and current density. We found that the dop-ing concentration can greatly affect the transmission coefficient and the current density; in partic-ular it increases the peak of the current density and displaces the position of the maxima of the current dependence on the applied bias voltage.

Share and Cite:

Almansour, S. and Hassen, D. (2014) Theoretical Study of Electronic Transmission in Resonant Tunneling Diodes Based on GaAs/AlGaAs Double Barriers under Bias Voltage. Optics and Photonics Journal, 4, 39-45. doi: 10.4236/opj.2014.43006.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] van der Wagt, J.P.A., Seabaugh, A.C. and Beam III, E. (1998) RTD/HFET Low Standby Power Memory Cell. IEEE Electron Device Letters, 19, 7-9.
[2] Micheel, L.J., Taddiken, A.H. and Seabaugh, A.C. (1993) Multiple-Valued LOGIC computation Circuits Using Micro- and Nanoelectronic Devices. The Proceedings of the 23rd International Symposium on Multi-Valued Logic, Sacramento, 24-27 May 1993, 164-169.
[3] Boykin, T.B., van der Wagt, J.P.A. and Harris Jr., J.S. (1991) Tight-binding model for GaAs/AlGaAs resonanttunneling diodes. Physical Review B, 43, 4777.
[4] Seabaugh, A.C., Brar, B., Broekaert, T., Frazier, G. and van der Wagt, P. (1997) Resonant Tunneling Circuit Technology: Has It Arrived? 19th Annual Symposium Gallium Arsenide Integrated Circuit (GaAs IC), Technical Digest, Anaheim, 12-15 October 1997, 119-122.
[5] Ando, Y. and Itoh, T. (1987) Calculation of Transmission Tunneling Current across Arbitrary Potential Barriers. Journal of Applied Physics, 61, 1497.
[6] Boykin T.B. (1995) Approximations for the Resonant-Tunneling Diode Current: Implications for Triple-Barrier Devices. Journal of Applied Physics, 78, 6818.
[7] Wang, X.-H., Gu, B.-Y. and Yang, G.-Z. (1997) Coupling between the Transverse and Longitudinal Components of an Electron in Resonant Tunneling. Physical Review B, 55, 9340.
[8] Ban, S.L., Hasbun, J.E. and Liang, X.X. (2000) A Novel Method for Quantum Transmission across Arbitrary Potential Barriers. Journal of Luminescence, 87-89, 369.
[9] Duschl, R., Schmidt, O.G. and Eberl, K. (2000) Epitaxially Grown Si/SiGe interband Tunneling Diodes with High Room-Temperature Peak-to-Valley Ratio. Applied Physics Letters, 76, 879.
[10] Zaslavsky, A., Tsui, D.C., Santos, M. and Shayegan, M. (1989) Magneto Tunneling in Double Barrier Heterostructures. Physical Review B, 40, 9829.
[11] Leadbeater, M.L., Alves, E.S., Eaves, L., Henini, M. and Hughes, O.H. (1989) Magnetic Field Studies of Elastic Scattering and Optic-Phonon Emission in Resonant-Tunneling Devices. Physical Review B, 39, 3438.
[12] Zaslavsky, A., Li, Y.P., Tsui, D.C. Santos, M. and Shayegan, M. (1990) Transport in Transverse Magnetic Fields in Resonant Tunneling Structures. Physical Review B, 42, 1374.
[13] Gong J., Liang X.-X. and Ban S.-L. (2002) Resonant Tunneling in Parabolic Quantum Well Structures under a Uniform Transverse Magnetic Field. Chinese Physics, 14, 201.
[14] Warde, E., Sakr, S., Tchernycheva, M. and Julien, F. H. (2012) Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices. Journal of Electronic Materials, 41, 965.
[15] Sakr, S., Warde, E., Tchernycheva, M. and Julien, F. H. (2011) Ballistic Transport in GaN/AlGaN Resonant Tunneling Diodes. Journal of Applied Physics, 109, 023717.
[16] Remnev, M.A., Kateev, I. Yu. and Elesin, V.F. (2010) Effect of Spacer Layers on Current-Voltage Characteristics of Resonant-Tunneling Diode. Semiconductor, 44, 1034.
[17] Saidi, I., Bouzajene, L., Gazzah, M.H., Mejri, H. and Maaref, H. (2006) Back Doping Design in Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors. Solid State Communications, 140, 308.
[18] Li, J.M., Lü, Y.W., Li, D.B., Han, X.X., Zhu, Q.S., Liu, X.L. and Wang, Z.G. (2004) Effect of Sponyaneous and Piezoelectric Polarization. rnal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 22, 2568.
[19] Ugwu, E.I. and Elebe. (2010) Analytical Study of Current Density on a Homogeneous Conductor Using Relativistic and Non-Relativistic Approach. Advances in Applied Science Research, 3, 259.
[20] Cuesta, J.A., Sanchez, A. and Adame, F.D. (1995) Self-Consistent Analysis of Electric Field Effects on Si Delta-Doped GaAs. Semiconductor Science and Technology, 10, 1303.
[21] Gmachl, C., Hock, M.Ng, Chu, S.-N.G. andCho, A.Y. (2000) Intersubband Absorption at λ = 1.55μm in Well- and Modulation-Doped GaN/AlGaN Multiple Quantum Wells with Superlattice Barriers. Applied Physics Letters, 77, 3722.
[22] Dakhlaoui, H. and Jaziri, S. (2005) Magnetic Properties in III-V Diluted Magnetic Semiconductor. Physica B: Condensed Matter, 355, 401-407.

Copyright © 2023 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.