Author(s)

Nosirjon Khaydarovich Yuldashev^*, Iftixorjon Isaqovich Yulchiev, Bozorboy Joboraliyevich Akhmadaliev, Khusanboy Manopovich Sulaymonov

Fergana Polytechnic Institute, Fergana, Uzbekistan.

Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization ${Р}_{circ.}$ of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field $H$ . Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor $g_1,g_2$ and the conduction band electron $g_e$ . In the case of a strong magnetic field $H$ // [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and ${Р}_{circ.}$ was performed for some critical values of $g_2/g_1$ , at which ${Р}_{circ.}$ exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.

Semiconductor, Recombination Radiation, Shallow Acceptor Center, Magnetic Field, Zeeman Splitting, g-Factors, Anisotropy, Circular Polarization, Intensity

Yuldashev, N. , Yulchiev, I. , Akhmadaliev, B. and Sulaymonov, K. (2024) Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field. Journal of Applied Mathematics and Physics, 12, 2407-2420. doi: 10.4236/jamp.2024.127145.