Author(s)

Xiang Wang, Chao Song, Yanqing Guo, Jie Song, Rui Huang

Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, People’s Republic of China.

Doubly stacked nanocrystalline-Si (nc-Si) based metal insulator semiconductor memory structure was fabricated by plasma enhanced chemical vapor deposition. Capacitance-Voltage (C-V) and capacitance-time (C-t) measurements were used to investigate electron tunnel, storage and discharging characteristic. The C-V results show that the flatband voltage increases at first, then decreases and finally increases, exhibiting a clear deep at gate voltage of 9 V. The de-creasing of flatband voltage at moderate programming bias is attributed to the transfer of electrons from the lower nc-Si layer to the upper nc-Si layer. The C-t measurement results show that the charges transfer in the structure strongly de-pends on the hold time and the flatband voltage decreases markedly with increasing the hold time.

nc-Si dots; Capacitance-Voltage Measurement; Storage

X. Wang, C. Song, Y. Guo, J. Song and R. Huang, "The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure," Modeling and Numerical Simulation of Material Science, Vol. 3 No. 1B, 2013, pp. 20-22. doi: 10.4236/mnsms.2013.31B006.