World Journal of Condensed Matter Physics

Vol.2 No.3(2012), Paper ID 22159, 5 pages

DOI:10.4236/wjcmp.2012.23026

 

Increasing ZnO Growth Rate by Modifying Oxygen Plasma Conditions in Plasma-Assisted Molecular Beam Epitaxy

 

Kuaile Zhao, Aidong Shen

 

Department of Electrical Engineering, The City College of New York, New York, USA
Department of Electrical Engineering, The City College of New York, New York, USA

 

Copyright © 2012 Kuaile Zhao, Aidong Shen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article

Zhao, K. and Shen, A. (2012) Increasing ZnO Growth Rate by Modifying Oxygen Plasma Conditions in Plasma-Assisted Molecular Beam Epitaxy. World Journal of Condensed Matter Physics, 2, 160-164. doi: 10.4236/wjcmp.2012.23026.
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