FinFET Field-Effect Transistor - Articles - Scientific Research Publishing

Study of Timing Characteristics of NOT Gate Transistor Level Circuit Implemented Using Nano-MOSFET by Analyzing Sub-Band Potential Energy Profile and Current-Voltage Characteristic of Quasi-Ballistic Transport (Articles)

Chek Yee Ooi, Soo King Lim

World Journal of Nano Science and Engineering Vol.6 No.4，December 29, 2016

DOI: 10.4236/wjnse.2016.64016 1,731 Downloads 3,239 Views Citations
Formation of Poly-Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films (Articles)

Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kazuki Kamimura, Toshiyuki Takamatsu

Journal of Materials Science and Chemical Engineering Vol.6 No.1，January 5, 2018

DOI: 10.4236/msce.2018.61003 840 Downloads 1,578 Views Citations
One-Dimensional Filamentary Multiparticle Quantum Structures Arising in the Plane Transverse to External Homogeneous Magnetic Field (Articles)

Vladimir V. Lugovoi

Journal of Modern Physics Vol.6 No.7，June 30, 2015

DOI: 10.4236/jmp.2015.67103 2,967 Downloads 3,631 Views Citations
28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I (Articles)

Ali Mohsen, Adnan Harb, Nathalie Deltimple, Abraham Serhane

Circuits and Systems Vol.8 No.4，April 30, 2017

DOI: 10.4236/cs.2017.84006 4,223 Downloads 8,824 Views Citations
28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II (Articles)

Ali Mohsen, Adnan Harb, Nathalie Deltimple, Abraham Serhane

Circuits and Systems Vol.8 No.5，May 19, 2017

DOI: 10.4236/cs.2017.85007 3,495 Downloads 6,974 Views Citations
Undergraduate Curriculum Development for Digital Integrated Circuit Design (Articles)

Xin Chen

Creative Education Vol.3 No.6A，October 25, 2012

DOI: 10.4236/ce.2012.326128 5,892 Downloads 8,525 Views Citations
This article belongs to the Special Issue on Higher Education
New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature (Articles)

Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi

World Journal of Nano Science and Engineering Vol.2 No.4，December 11, 2012

DOI: 10.4236/wjnse.2012.24022 4,864 Downloads 8,781 Views Citations
Graph Modeling for Static Timing Analysis at Transistor Level in Nano-Scale CMOS Circuits (Articles)

Abdoul Rjoub, Almotasem Bellah Alajlouni, Hassan Almanasrah

Circuits and Systems Vol.4 No.2，April 17, 2013

DOI: 10.4236/cs.2013.42018 5,867 Downloads 9,746 Views Citations
Mixed-Mode Device Modeling of DGMOS RF Oscillators (Articles)

Mourad Bella, Saida Latreche, Samir Labiod, Christian Gontrand

Circuits and Systems Vol.5 No.1，January 14, 2014

DOI: 10.4236/cs.2014.51004 3,915 Downloads 5,932 Views Citations
On a Parasitic Bipolar Transistor Action in a Diode ESD Protection Device (Articles)

Jin Young Choi

Circuits and Systems Vol.7 No.9，July 19, 2016

DOI: 10.4236/cs.2016.79199 1,866 Downloads 3,650 Views Citations
A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN (Articles)

Reza Karami, Masoud Sabaghi, Massoud Masoumi

World Journal of Engineering and Technology Vol.5 No.2，May 27, 2017

DOI: 10.4236/wjet.2017.52026 1,932 Downloads 3,954 Views Citations

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