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Study of Nonradiative Recombination Centers in n-GaN Grown on LT-GaN and AlN Buffer Layer by Below-Gap Excitation
(Articles)
M. D. Haque
,
M. Julkarnain
,
A. Z. M. Touhidul Islam
,
N. Kamata
Advances in Materials Physics and Chemistry
Vol.8 No.3
,March 30, 2018
DOI:
10.4236/ampc.2018.83010
936
Downloads
2,006
Views
Citations
Anti-Fowler Temperature Regime in Photoemission from
n
-Type Semiconductors with Surface Accumulation Layer
(Articles)
Michel Molotskii
,
Klimentiy Shimanovich
,
Yossi Rosenwaks
Journal of Modern Physics
Vol.8 No.7
,June 7, 2017
DOI:
10.4236/jmp.2017.87064
1,639
Downloads
6,787
Views
Citations
FACE-HF: Focused Assessment by Chest Sonography and Echocardiography in Acute Heart Failure Patients
(Articles)
Mohamed Sanhoury
,
Samar Elsayed
,
Abdallah Mostafa Almaghraby
,
Mahmoud Hassanein
,
Asmaa Alkafafy
World Journal of Cardiovascular Diseases
Vol.12 No.3
,March 18, 2022
DOI:
10.4236/wjcd.2022.123015
129
Downloads
720
Views
Citations
Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
(Articles)
Sonachand Adhikari
,
Saroj Kanta Patra
,
Ashok Lunia
,
Sandeep Kumar
,
Priyavart Parjapat
,
Bhoopendra Kushwaha
,
Pawan Kumar
,
Sumitra Singh
,
Ashok Chauhan
,
Kuldip Singh
,
Suchandan Pal
,
C. Dhanavantri
Journal of Applied Mathematics and Physics
Vol.2 No.12
,November 25, 2014
DOI:
10.4236/jamp.2014.212129
4,233
Downloads
5,298
Views
Citations
Annealing Effects on Electrical Properties and Interfacial Reactions of Ni/Cu Schottky Rectifiers on n-Type InP
(Articles)
Yerpedu Munikrishna Reddy
,
M. K. Nagaraj
,
S. Sankar Naik
,
V. Rajagopal Reddy
Journal of Modern Physics
Vol.3 No.7
,July 18, 2012
DOI:
10.4236/jmp.2012.37074
5,150
Downloads
8,583
Views
Citations
Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures
(Articles)
Xueyun Song
,
Xianghua Zeng
,
Junbin Zhang
,
Yuzhe Jin
,
Xiangdong Meng
Materials Sciences and Applications
Vol.3 No.12
,December 13, 2012
DOI:
10.4236/msa.2012.312122
4,244
Downloads
6,684
Views
Citations
Dependence of the Structure, Optical Phonon Modes and Dielectric Properties on Pressure in Wurtzite GaN and AlN
(Articles)
Huanyou Wang
,
Yaqi Chen
,
Yalan Li
,
Xiangyan He
Advances in Materials Physics and Chemistry
Vol.5 No.8
,August 14, 2015
DOI:
10.4236/ampc.2015.58031
4,614
Downloads
5,513
Views
Citations
Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs
(Articles)
Hayao Kasai
,
Takuya Oikawa
,
Tomoyoshi Mishima
,
Tohru Nakamura
Journal of Materials Science and Chemical Engineering
Vol.5 No.1
,January 4, 2017
DOI:
10.4236/msce.2017.51007
3,155
Downloads
3,994
Views
Citations
Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements
(Articles)
D. Subba Reddy
,
M. Bhaskar Reddy
,
N. Nanda Kumar Reddy
,
V. Rajagopal Reddy
Journal of Modern Physics
Vol.2 No.3
,March 31, 2011
DOI:
10.4236/jmp.2011.23018
10,800
Downloads
21,041
Views
Citations
THz Oscillations in a GaN Based Planar Nano-Device
(Articles)
K. Y. Xu
,
Y. N. Wang
,
Z. N. Wang
,
J. W. Xiong
,
G. Wang
Journal of Computer and Communications
Vol.1 No.7
,November 29, 2013
DOI:
10.4236/jcc.2013.17012
3,448
Downloads
5,279
Views
Citations
Deep Traps and Parasitic Effects in Al
0.25
Ga
0.75
N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces
(Articles)
Salah Saadaoui
,
Olfa Fathallah
,
Mohamed Mongi Ben Salem
,
Christophe Gaquière
,
Hassen Maaref
Open Access Library Journal
Vol.2 No.8
,August 27, 2015
DOI:
10.4236/oalib.1101562
1,291
Downloads
1,958
Views
Citations
Characteristics of AlGaN/GaN HEMTs for Detection of MIG
(Articles)
Hasina F. Huq
,
Hector Trevino II
,
Jorge Castillo
Journal of Modern Physics
Vol.7 No.13
,September 23, 2016
DOI:
10.4236/jmp.2016.713154
1,926
Downloads
4,239
Views
Citations
Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT
(Articles)
Palanichamy Vimala
,
L. Vidyashree
Journal of Applied Mathematics and Physics
Vol.4 No.10
,October 25, 2016
DOI:
10.4236/jamp.2016.410193
1,608
Downloads
3,364
Views
Citations
This article belongs to the Special Issue on
Computational Physics and Its Applications
Characteristics of GaN Thin Films Using Magnetron Sputtering System
(Articles)
Hasina F. Huq
,
Rocio Y. Garza
,
Roman Garcia-Perez
Journal of Modern Physics
Vol.7 No.15
,November 9, 2016
DOI:
10.4236/jmp.2016.715178
2,382
Downloads
4,652
Views
Citations
Balancing Thermal and Electrical Packaging Requirements for GaN Microwave and Millimeter-Wave High Power Amplifier Modules
(Articles)
Rick Sturdivant
,
Astacian Bogdon
,
Edwin K. P. Chong
Journal of Electronics Cooling and Thermal Control
Vol.7 No.1
,January 18, 2017
DOI:
10.4236/jectc.2017.71001
2,208
Downloads
4,152
Views
Citations
Investigation on Breakdown Characteristics of Various Surface Terminal Structures for GaN-Based Vertical P-i-N Diodes
(Articles)
Song Shi
,
Guanyu Wang
,
Yingcong Xiang
,
Chuan Guo
,
Xing Wang
,
Yinlin Pu
,
Huilan Li
,
Zhixian Li
Journal of Applied Mathematics and Physics
Vol.12 No.2
,February 29, 2024
DOI:
10.4236/jamp.2024.122037
75
Downloads
221
Views
Citations
Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements
(Articles)
M. Charfeddine
,
Malek Gassoumi
,
H. Mosbahi
,
C. Gaquiére
,
M. A. Zaidi
,
H. Maaref
Journal of Modern Physics
Vol.2 No.10
,October 20, 2011
DOI:
10.4236/jmp.2011.210152
8,513
Downloads
17,284
Views
Citations
Structural and Electrical Characterization of GaN Thin Films on Si(100)
(Articles)
Gajanan Niranjan Chaudhari
,
Vijay Ramkrishna Chinchamalatpure
,
Sharada Arvind Ghosh
American Journal of Analytical Chemistry
Vol.2 No.8
,December 7, 2011
DOI:
10.4236/ajac.2011.28115
6,517
Downloads
11,389
Views
Citations
Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus
(Articles)
Yuichi Sato
,
Shota Ishizaki
,
Yoshifumi Murakami
,
Mohamad Idham
,
Nur Ain
,
Tatsuya Matsunaga
Journal of Modern Physics
Vol.6 No.9
,August 21, 2015
DOI:
10.4236/jmp.2015.69134
3,489
Downloads
4,219
Views
Citations
A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN
(Articles)
Reza Karami
,
Masoud Sabaghi
,
Massoud Masoumi
World Journal of Engineering and Technology
Vol.5 No.2
,May 27, 2017
DOI:
10.4236/wjet.2017.52026
1,844
Downloads
3,662
Views
Citations
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