Author(s)

Binbin Weng, Jijun Qiu, Lihua Zhao, Caleb Chang, Zhisheng Shi

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The School of Electrical and Computer Engineering, University of Oklahoma, Norman, USA.

In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant- area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered. Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity (D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.

Pb_1-xSn_xSe; Lifetime; Resistant-Area Product; Quantum Efficiency; Detectivity

B. Weng, J. Qiu, L. Zhao, C. Chang and Z. Shi, "Theoretical D* Optimization of N+-p Pb_1-xSn_xSe Long-Wavelength (8 - 11 μm) Photovoltaic Detector at 77 K," <i>Detection</i>, Vol. 2 No. 1, 2014, pp. 1-6. doi: 10.4236/detection.2014.21001.