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Theoretical D* Optimization of N+-p Pb1-xSnxSe Long-Wavelength (8 - 11 μm) Photovoltaic Detector at 77 K

DOI: 10.4236/detection.2014.21001    3,242 Downloads   5,957 Views  

ABSTRACT

In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant- area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered. Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity (D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

B. Weng, J. Qiu, L. Zhao, C. Chang and Z. Shi, "Theoretical D* Optimization of N+-p Pb1-xSnxSe Long-Wavelength (8 - 11 μm) Photovoltaic Detector at 77 K," <i>Detection</i>, Vol. 2 No. 1, 2014, pp. 1-6. doi: 10.4236/detection.2014.21001.

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