Materials Sciences and Applications

Vol.2 No.5(2011), Paper ID 5026, 6 pages

DOI:10.4236/msa.2011.25055

 

Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He+ and H+ Ions Bombardment

 

Mohamed Ghaffour, Abdellaoui Abdellaoui, Abdellah Ouerdane, M'Hammed Bouslama, Christian Jardin

 

 

Copyright © 2011 Mohamed Ghaffour, Abdellaoui Abdellaoui, Abdellah Ouerdane, M'Hammed Bouslama, Christian Jardin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


M. Ghaffour, A. Abdellaoui, A. Ouerdane, M. Bouslama and C. Jardin, "Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He+ and H+ Ions Bombardment," Materials Sciences and Applications, Vol. 2 No. 5, 2011, pp. 421-426. doi: 10.4236/msa.2011.25055.

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