[1]
|
W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg and S. L. Gilbert, “Epitaxially Grown AlN and Its Optical Band Gap,” Journal of Applied Physics, Vol. 44, No. 1, 1973, pp. 292-296.
doi:10.1063/1.1661876
|
[2]
|
C. Ozgit, I. Donmez, M. Alevli and N. Biyikli, “Self-Limiting Low-Temperature Growth of Crystalline AlN Thin Films by Plasma-Enhanced Atomic Layer Deposition,” Thin Solid Films, Vol. 520, 2012, pp. 2750-2755.
doi:10.1016/j.tsf.2011.11.081
|
[3]
|
K. M. Taylor and C. Lenie, “Some Properties of Aluminum Nitride,” Journal of the Electrochemical Society, Vol. 107, No. 4, 1960, pp. 308-314.
doi:10.1149/1.2427686
|
[4]
|
G. A. Slack, “Nonmetallic Crystals with High Thermal Conductivity,” Journal of Physics and Chemistry of Solids, Vol. 34, No. 2, 1973, pp. 321-335.
doi:10.1016/0022-3697(73)90092-9
|
[5]
|
Z. An, C. Men, Z. Xu, P. K. Chu and C. Lin, “Electrical Properties of AlN Thin Films Prepared by Ion Beam Enhanced Deposition,” Surface & Coatings Technology, Vol. 196, No. 1-3, 2005, pp. 130-134.
doi:10.1016/j.surfcoat.2004.08.169
|
[6]
|
X. Song, R. Fu and H. He, “Frequency Effects on the Dielectric Properties of AlN Film Deposited by Radio Frequency Reactive Magnetron Sputtering,” Microelectronic Engineering, Vol. 86, No. 11, 2009, pp. 2217-2221.
doi:10.1016/j.mee.2009.03.036
|
[7]
|
W. M. Yim and R. J. Paff, “Thermal Expansion of AlN, Sapphire, and Silicon,” Journal of Applied Physics, Vol. 45, No. 3, 1974, pp. 1456-1457. doi:10.1063/1.1663432
|
[8]
|
S. P. Dodd, G. A. Saunders, M. Cankurtaran and B. James, “Ultrasonic Study of the Elastic and Nonlinear Acoustic Properties of Ceramic Aluminum Nitride,” Journal of Materials Science, Vol. 36, No. 3, 2001, pp. 723-729.
doi:10.1023/A:1004897126648
|
[9]
|
I. Yonenaga, “Thermo-Mechanical Stability of WideBandgap Semiconductors: High Temperature Hardness of SiC, AlN, GaN, ZnO and ZnSe,” Physica B: Condensed Matter, Vol. 308-310, 2001, pp. 1150-1152.
doi:10.1016/S0921-4526(01)00922-X
|
[10]
|
A. F. Belyanin, L. L. Bouilov, V. V. Zhirnov, A. I. Kame- nev, K. A. Kovalskij and B. V. Spitsyn, “Applications of Aluminum Nitride Films for Electronic Devices,” Diamond and Related Materials, Vol. 8, No. 2-5, 1999, pp. 369-372. doi:10.1016/S0925-9635(98)00412-9
|
[11]
|
M. B. Assouar, O. Elmazria, P. Kirsch, P. Alnot, V. Mortet and C. Tiusan, “High-Frequency Surface Acoustic Wave Devices Based on AlN/Diamond Layered Structure Realized Using E-Beam Lithography,” Journal of Applied Physics, Vol. 101, 2007, Article ID: 114507.
|
[12]
|
J. Olivares, E. Iborra, M. Clement, L. Vergara, J. Sangrador and A. Sanz-Hervas, “Piezoelectric Actuation of Microbridges Using AlN,” Sensors and Actuators A, Vol. 123-124, 2005, pp. 590-595.
doi:10.1016/j.sna.2005.03.066
|
[13]
|
F. A. Ponce and D. P. Bour, “Nitride-Based Semiconductors for Blue and Green Light-Emitting Devices,” Nature, Vol. 386, 1997, pp. 351-359. doi:10.1038/386351a0
|
[14]
|
X. Ni, L. Zhu, Z. Ye, Z. Zhao, H. Tang, W. Hong and B. Zhao, “Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer,” Surface & Coatings Technology, Vol. 198, No. 1-3, 2005, pp. 350-353.
doi:10.1016/j.surfcoat.2004.10.073
|
[15]
|
V. Venkatachalapathy, A. Galeckas, I.-H. Lee and A. Y. Kuznetsov, “Engineering of Nearly Strain Free ZnO Films on Si(111) by Tuning AlN Buffer Thickness,” Physica B: Condensed Matter, Vol. 407, 2012, pp. 1476-1480.
doi:10.1016/j.physb.2011.09.065
|
[16]
|
S. Raghavan and J. M. Redwing, “In Situ Stress Measurements during the MOCVD Growth of AlN Buffer Layers on (111) Si Substrates,” Journal of Crystal Growth, Vol. 261, No. 2-3, 2004, pp. 294-300.
doi:10.1016/j.jcrysgro.2003.11.020
|
[17]
|
N. Onojima, J. Suda and H. Matsunami, “Lattice Relaxation Process of AlN Growth on Atomically Flat 6H-SiC Substrate in Molecular Beam Epitaxy,” Journal of Crystal Growth, Vol. 237-239, 2002, pp. 1012-1016.
doi:10.1016/S0022-0248(01)02118-2
|
[18]
|
S.-H. Lee, K. H. Yoon, D.-S. Cheong and J.-K. Lee, “Relationship between Re-sidual Stress and Structural Properties of AlN Films Deposited by r.f. Reacrive Sputtering,” Thin Solid Films, Vol. 435, No. 1-2, 2003, pp. 193-198.
doi:10.1016/S0040-6090(03)00353-5
|
[19]
|
J. Keckes, S. Six, W. Tesch, R. Resel and B. Rauschenbach, “Evaluation of Thermal and Growth Stresses in Heteroepitaxial AlN Thin Films Formed on (0001) Sapphire by Pulsed Laser Ablation,” Journal of Crystal Growth, Vol. 240, No. 1-2, 2002, pp. 80-86.
doi:10.1016/S0022-0248(02)00877-1
|
[20]
|
N. Matsunami, S. Venkatachalam, M. Tazawa, H. Kakiuchida and M. Sataka, “Ion Beam Characterization of rfSputter Deposited AlN Films on Si(111),” Nuclear Instruments Methods B, Vol. 266, No. 8, 2008, pp. 15221526. doi:10.1016/j.nimb.2007.12.086
|
[21]
|
N. Matsunami, T. Shimura, M. Tazawa, T. Kusumori, H. Kakiuchida, M. Ikeyama, Y. Chimi and M. Sataka, “Modifications of AlN Thin Films by Ions,” Nuclear Instruments Methods B, Vol. 257, No. 1-2, 2007, pp. 433-437.
doi:10.1016/j.nimb.2007.01.043
|
[22]
|
J. F. Ziegler, J. P. Biersack and U. Littmark, “The Stopping and Range of Ions in Solids,” Pergamon Press, New York, 1985.
|
[23]
|
W. Martienssen and H. Warlimont, “Handbook of Condensed Matter and Materials Data,” Springer, Berlin, 2005.
doi:10.1007/3-540-30437-1
|
[24]
|
J. X. Zhang, H. Cheng, Y. Z. Chen, A. Uddin, S. Yuan, S. J. Geng and S. Zhang, “Growth of AlN Films on Si(100) and Si(111) Substrates by Reactive Magnetron Sputtering,” Surface Coating & Technology, Vol. 198, No. 1-3, 2005, pp. 68-73. doi:10.1016/j.surfcoat.2004.10.075
|
[25]
|
N. Matsunami, M. Sataka, S. Okayasu and M. Tazawa, “Electronic Sputtering of Nitrides by High-Energy Ions,” Nuclear Instruments Methods B, Vol. 256, No. 1, 2007, pp. 333-336. doi:10.1016/j.nimb.2006.12.022
|