N. Onojima, J. Suda and H. Matsunami, “Lattice Relaxation Process of AlN Growth on Atomically Flat 6H-SiC Substrate in Molecular Beam Epitaxy,” Journal of Crystal Growth, Vol. 237-239, 2002, pp. 1012-1016. doi:10.1016/S0022-0248(01)02118-2

has been cited by the following article:

• TITLE: XRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition

  AUTHORS: N. Matsunami, H. Kakiuchida, M. Sataka, S. Okayasu

  KEYWORDS: Aluminum Nitride Film; Composition; Impurities; Atomic Structure; Surface Morphology; Optical Properties

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.3 No.1A, April 28, 2013

  ABSTRACT: AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering spectroscopy (RBS) and it appears that XRD intensity does not show a linear increase with the film thickness but a correlation with the stress, i.e., deviation of the lattice parameter of the film from that of bulk. The film composition and impurities have been analyzed by ion beam techniques. Effects of high-energy ion beams are briefly presented on atomic structure (whether stress relaxation occurs or not), surface morphology and optical properties.