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World Journal of Nano Science and Engineering
Submission
World Journal of Nano Science and Engineering
ISSN Print:
2161-4954
ISSN Online:
2161-4962
www.scirp.org/journal/wjnse
E-mail:
wjnse@scirp.org
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"
Study of Timing Characteristics of NOT Gate Transistor Level Circuit Implemented Using Nano-MOSFET by Analyzing Sub-Band Potential Energy Profile and Current-Voltage Characteristic of Quasi-Ballistic Transport
"
written by
Chek Yee Ooi, Soo King Lim
,
published by
World Journal of Nano Science and Engineering
,
Vol.6 No.4, 2016
has been cited by the following article(s):
Google Scholar
CrossRef
[1]
Comparative Analysis of the Drain Current in a 7nm and 14nm Fully Depleted Silicon-On-Insulator
SLU Journal of Science …
,
2022
[2]
DEVICE AND CIRCUIT LEVEL SIMULATION STUDY OF NOR GATE LOGIC FAMILIES DESIGNED USING NANO-MOSFETs
2021
[3]
Effect of Temperature on the Quasi Ballistic Transport of a Double Gate Nano-MOSFET
2021
[4]
A flexibility and accuracy comparison study of different current-voltage equations for double-gate nano-MOSFET by simulation and theory
Applications of Modelling and Simulation
,
2021
[5]
Investigation of the Thermal Effect in Nano Silicon on Insulator (SOI) MOSFET
NIPES Journal of …
,
2021
No relevant information.
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