A. M. EL Sherbini, A. M. Aboulfotouh, S. H. Allam and Th. M. EL Sherbini, “Diode Laser Absorption Measurements at the Hα-Transition in Laser Induced Plasmas on Different Targets,” Spectrochimica Acta Part B: Atomic Spectroscopy, Vol. 65, No. 12, 2010, pp. 1041-1046. doi:10.1016/j.sab.2010.11.004

has been cited by the following article:

• TITLE: Measurement of Plasma Parameters in Laser-Induced Breakdown Spectroscopy Using Si-Lines

  AUTHORS: Ashraf Mohmoud El Sherbini, Abdel Aziz Saad Al Aamer

  KEYWORDS: Laser; Electron Density; Temperature; Plasma; Hα-Line

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.2 No.4, December 28, 2012

  ABSTRACT: The electron density and temperature of the laser induced silicon plasma were measured using two different methods. The plasma was produced via the interaction of high peak power Nd-YAG laser at the fundamental wavelength of 1064 nm with a plane solid iron target contain small traces of silicon as an element of minor concentration. The lines from the Si I at 288.15 nm and Si II-ionic lines at 413.08 and 634.71 nm were utilized to evaluate the plasma parameters. The reference plasma parameters were measured utilizing the Hα-line at 656.27 nm appeared in the spectra under the same condition. The electron density was measured utilizing the Stark broadening of the silicon lines and the temperature from the standard Saha-Boltzmann plot method. The comparison between electron densities from different silicon lines to that from the Hα-line reveals that the Si I-line at 288.15 nm contain some optical thickness while the Si II-ionic lines were found to be free from this effect. The measurements were repeated at different delay times between the laser and the camera in the range from 1 - 5 μsec. The electron density was found decreases from 2 × 1018 down to 4 × 1017 cm–3. After correcting the spectral intensity at the Si I-line at 288.15 nm, the temperatures evaluated from the different methods were found in an excellent agreement and decreases from 1.25 down to 0.95 eV with delay time.