A. Ghetti, J. Bude, P. Silverman, A. Hamad and H. Vaidya, “Modeling and Simulation of Tunneling Current in MOS Devices including Quantum Mechanical Effects,” IEICE Transactions on Electronics, Vol. E83-C, No. 8, 2000, pp. 1175-1182.

has been cited by the following article:

• TITLE: Nanocapacitor with a Cantor Multi-Layered Structure

  AUTHORS: Rubén Montelongo, David González, Ricardo Bustos, Gabriel González

  KEYWORDS: Nanocapacitor; Cantor Structure; Schrodinger-Poisson Equation

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.9, September 24, 2012

  ABSTRACT: We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.