R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson and V. Umansky, “Radiation-In- duced Oscillatory Hall Effect in Highmobility GaAs/ AlxGa1 xAs devices,” Physical Review B, Vol. 69, 2004, Article ID: 161306. doi:10.1103/PhysRevB.69.161306

has been cited by the following article:

• TITLE: Theory of Zero-Resistance States Generated by Radiation in GaAs/AlGaAs

  AUTHORS: Shigeji Fujita, Kei Ito, Akira Suzuki

  KEYWORDS: Superconducting (Zero-Resistance) States; Composite-Boson (Fermion); B-Linear Hall Resistivity; Phonon (Fluxon) Exchange

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.7, July 18, 2012

  ABSTRACT: Mani observed zero-registance states similar to those quantum-Hall-effect states in GaAs/AlGaAs but without the Hall resistance plateaus upon the application of radiations [R. G. Mani, Physica E 22, 1 (2004)]. An interpretation is presented. The applied radiation excites “holes”. The condensed composite (c)-bosons formed in the excited channel create a superconducting state with an energy gap. The supercondensate suppresses the non-condensed c-bosons at the higher energy, but it cannot suppress the c-fermions in the base channel, and the small normal current accompanied by the Hall field yeilds a B-linear Hall resistivity.