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K. S. Yang, R. Q. Wu, L. Shen, Y. P. Feng, Y. Dai and B. B. Huang, “Origin of d0 Magnetism in II-VI and III-V Semiconductors by Substitutional Doping at Anion Site,” Physical Review B, Vol. 81, No. 12, 2010, pp. 125211-125215. doi:10.1103/PhysRevB.81.125211

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