TITLE:
Impact of the Doping Rate of Different Zone of the Bifacial PV Cell on the Electrical Parameters
AUTHORS:
Ramatou Konate, Bernard Zouma, Bruno Korgo, Aboubacar Savadogo, Cyrile Constant Moyenga, Issa Zerbo
KEYWORDS:
Doping Rate, Base, Emitter, p+ Overdoped Zone, Bifacial Solar Cell
JOURNAL NAME:
Smart Grid and Renewable Energy,
Vol.16 No.10,
October
31,
2025
ABSTRACT: In this work, we investigate the effect of the doping rate on the electrical parameters of the different zones of the bifacial polycrystalline silicon solar cell under multispectral illumination. To do this, from our hypothesis, we determined the expression of the continuity equation in the emitter, the base and the overdoped zone p+. The photocurrent density, photovoltage and electrical power were studied as a function of the dynamic velocity at the junction for different values of the doping rate. The results obtained by simulation show us that to achieve the best performance of the bifacial PV cell the doping rate of the emitter should be between [1018 - 1019 cm−3], that of the base between [1016 - 1017 cm−3] and for the p+ zone between [1020 - 1021 cm−3]. Within these doping ranges, the fill factor, which represents the efficiency of the cell, reaches optimal values.