Chen, I.C., Holland, S. and Hut, C. (1985). A Quantitative Physical Model for Time-Dependent Breakdown in SiO₂. 23rd International Reliability Physics Symposium, Orlando, 25-29 March 1985, 24-31.
https://doi.org/10.1109/irps.1985.362070

has been cited by the following article:

• TITLE: A Generalized Gibbs Potential Model for Materials Degradation

  AUTHORS: J. W. McPherson

  KEYWORDS: Materials Degradation, Degradation Rate, Gibbs Potential, Gibbs Free Energy, Activation Energy, Dielectrics, Dielectric Breakdown, Time-Dependent Dielectric Breakdown, TDDB, Bond Breakage, Thermochemical E-Model

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.14 No.4, November 28, 2024

  ABSTRACT: It is well known that work done on a material by conservative forces (electrical, mechanical, chemical) will increase the Gibbs Potential of the material. The increase in Gibbs Potential can be stored in the material and is free/available to do work at some later time. However, it will be shown in this paper that while in this state of higher Gibbs potential, the material is metastable and the material will degrade spontaneously/naturally with time in an effort to reach a lower Gibbs Potential. A generalized Gibbs Potential Model is developed herein to better understand its impact on a materials degradation rate. Special attention will be given to dielectrics degradation.