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has been cited by the following article:

• TITLE: Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field

  AUTHORS: Nosirjon Khaydarovich Yuldashev, Iftixorjon Isaqovich Yulchiev, Bozorboy Joboraliyevich Akhmadaliev, Khusanboy Manopovich Sulaymonov

  KEYWORDS: Semiconductor, Recombination Radiation, Shallow Acceptor Center, Magnetic Field, Zeeman Splitting, g-Factors, Anisotropy, Circular Polarization, Intensity

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.12 No.7, July 17, 2024

  ABSTRACT: Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Р circ. of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H . Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g 1 , g 2 and the conduction band electron g e . In the case of a strong magnetic field H // [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Р circ. was performed for some critical values of g 2 / g 1 , at which Р circ. exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.