Article citationsMore>>
Gao, G., Gao, W., Cannuccia, E., Taha-Tijerina, J., Balicas, L., Mathkar, A., Narayanan, T.N., Liu, Z., Gupta, B.K., Peng, J., Yin, Y., Rubio, A. and Ajayan, P.M. (2012) Artificially Stacked Atomic Layers: Toward New Van der waals Solids. Nano Letters, 12, 3518-3525.
https://doi.org/10.1021/nl301061b
has been cited by the following article:
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TITLE:
Dielectric Properties of Multi-Layers Hexagonal Boron Nitride
AUTHORS:
M. Fazail Khalid, Ibtisam Riaz, Rashid Jalil, Usamah Mahmood, Rehan Rahat Mir, Hafiz Amir Sohail
KEYWORDS:
Hexagonal Boron Nitride (h-BN), Boron Nitride Nanosheets (BNNs), Dimethylformamide (DMF), Isopropyl Alcohol (IPA)
JOURNAL NAME:
Materials Sciences and Applications,
Vol.11 No.6,
June
3,
2020
ABSTRACT: A higher value of the dielectric constant of h-BN makes it quite favourable material in energy storing device. The variation in dielectric constant was observed as a function of thickness. In this research work multilayers of Hexagonal Boron Nitride (h-BN) was fabricated by using the Chemical exfoliation method. Two solvents Dimethylformamide (DMF) and Isopropyl Alcohol (IPA) were used for the exfoliation of h-BN. Successful sonication of hexagonal boron nitride led to the formation of Boron Nitride nanosheets (BNNs). The stable dispersibility of h-BN in Dimethylformamide and Isopropyl Alcohol was confirmed by UV Visible Spectroscopy, X-ray diffraction (XRD) and Scanning electron microscopy (SEM) confirm the mono crystallite structure (002) and nanoflakes like morphology of h-BN respectively. This appropriate strategy offered a feasible route to produce multilayer of hexagonal boron nitride. After the successful fabrication of h-BN multilayers its dielectric properties were calculated by using LCR meter. Profilometer revealed the variation in thickness and value of Dielectric constant was calculated by using its formula.
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