Thiam, Nd., Diao, A., Ndiaye, M., Dieng, A., Thiam, A., Sarr, M., Maiga, A.S. and Sissoko, G. (2012) Electric Equivalent Models of Intrinsic Recombination Velocities of a Bifacial Silicon Solar Cell under Frequency Modulation and Magnetic Field Effect. Research Journal of Applied Sciences, Engineering and Technology, 4, 4646-4655.

has been cited by the following article:

• TITLE: Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

  AUTHORS: Amadou Diao, Ndeye Thiam, Martial Zoungrana, Gokhan Sahin, Mor Ndiaye, Grégoire Sissoko

  KEYWORDS: Solar Cell, Magnetic Field, Frequency Modulation, Diffusion Coefficient

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.4 No.2, May 13, 2014

  ABSTRACT: In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field; the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers’ mobility. Electric parameters were derived from the diffusion coefficient equivalent circuits.