Article citationsMore>>

Chen C, Zhang W, Zhao B and Zhang Y, “Investigation of Schottky-Barrier carbon nanotube field-effect transistor by an efficient semi-classical numerical modeling,” Phys. Lett. A, vol. 374, pp. 309-312, 2009.

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2024 Scientific Research Publishing Inc. All Rights Reserved.
Top